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33篇 您的检索式：作者名="Osten H"

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	题名	作者	年代	出处	被引量
1	Exciton-phonon coupling in indirect gap AgBr nanocrystals显示文摘	Vogelsang H Stolz H Osten W V	1996	J Lumin1996，70，16：	1
2	Growth of an inverse tetragonal distorted SiGe layer on Si (001) by adding small amounts of carbon 显示文摘	Osten H J Bugiel E Zaumseil P	1994	Appl Phys Lett1994，64，25：	1
3	Raman investigations of elastic strain relief in Si1-xGex layers on patterned silicon substrate显示文摘	Dietrich B Bugiel E Osten H	1993	J Appl Phys1993，，74：	1
4	Advances in manufacturing systems for the production of pastes for lead/acid battery plates显示文摘	Kitchens W R Osten R C Lambert D W H	1995	Journal of Power Sources1995，53，2：	1
5	High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide 显示文摘	Osten H J Liu J P Gaworzewski P Bugiel E Zaumseil P	2000	IEDM Tech Digest2000，，：	1
6	Band gap and band discontinuities at crystalline Pr203/Si(001) heterojunctions 显示文摘	Osten H J Liu J P Mussig H J	2002	Appl Phys Lett2002，80，：	1
7	Introducing crystalline rare-earth oxides into Si technologies 显示文摘	Osten H J Laha A Czernohorsky M	2008	Phys Stat Sol (a)2008，205，：	1
8	Epitaxial multicomponent rare earth oxide for high-k application显示文摘	Laha A Fissel A Bugiel E Osten H J	2005	Thin Solid Films2005，515，：	1
9	Epitaxial growth of praseodymium oxide on silicon 显示文摘	Osten H J Liu J P Bugiel E Mussig H J Zaumseil P	2001	Mater Sci Eng B2001，87，：	1
10	Epitaxial praseodymium oxide: a new high-K dielectric显示文摘	Osten H J Bugiel E Fissel A	2003	Solid-State Electronics2003，47，：	1
11	MBE growth and properties of super-saturated, carbon-containing silicon/germanium alloy on Si (001) 显示文摘	Osten H J	2000	Thin Solid Films2000，367，12：	1
12	Epitaxial growth of Pr2O3 on Si (111 ) and the observation of a hexagonal to cubic phase transition during post growth N2 annealing显示文摘	Liu J P Zaumseil P Bugiel E Osten H J	2001	Appl Phys Lett2001，79，：	1
13	Epitaxial multicomponent rare earth oxide for high-k application显示文摘	Laha A Fissel A Bugiel E Osten H J	2007	Thin Solid Films2007，515，：	1
14	Growth of an inverse tetragonal distorted SiGe layer on Si (001) by adding small amounts of carbon 显示文摘	Osten H J Bugiel E Zaumseil P	1994	Appl Phys Lett1994，64，25：	1
15	Characterization of picosecond laser pulses by a bandwidth-limited time-resolved spectrum 显示文摘	Jütte M von der Osten W Stolz H	1998	Optics Communications1998，157，：	1
16	Wave front reconstruction with the adaptive Shack-Hart mann sensor 显示文摘	SEIFERT L TIZIANI H J OSTEN W	2005	Optics Communications2005，245，：	1
17	Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application 显示文摘	Fissel A Czemohorsky M Osten H J	2006	Superlattices and Microstructures2006，40，：	1
18	Lattice distortion in a strain-compensated Si1-x-yGexCy layer on silicon显示文摘	Osten H J Rucker H	1994	Phys Rev1994，49，17：	1
19	Growth of aninverse tetragonaI distorted SiGe Iayer on Si(001)byadding small amounts of carbon显示文摘	OSTEN H J BUGIEL E ZANMSEIL P	1994	Appl Phys Lett1994，64，25：	1
20	Optical properties of γ-AgI nanocrystals synthesized in reverse micelles 显示文摘	Vogelsang H Husberg O Osten W	2000	J Lumin2000，86，2：	1

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