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17篇 您的检索式：作者名="Bugiel E"

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		题名	作者	年代	出处	被引量
	1	Growth of an inverse tetragonal distorted SiGe layer on Si (001) by adding small amounts of carbon 显示文摘	Osten H J Bugiel E Zaumseil P	1994	Appl Phys Lett1994，64，25：	1
	2	Raman investigations of elastic strain relief in Si1-xGex layers on patterned silicon substrate显示文摘	Dietrich B Bugiel E Osten H	1993	J Appl Phys1993，，74：	1
	3	Crystalline ternary rare earth oxide with capacitanee equivalent thickness below lnm for high-k application显示文摘	Laha A Bugiel E	2006	Appl Phys Lett2006，88，17：	1
	4	Epitaxial multi-component rare earth oxide for high-k application显示文摘	Laha A Fissel A Bugiel E	2007	Thin Solid Films2007，515，：	1
	5	High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide 显示文摘	Osten H J Liu J P Gaworzewski P Bugiel E Zaumseil P	2000	IEDM Tech Digest2000，，：	1
	6	Epitaxial multicomponent rare earth oxide for high-k application显示文摘	Laha A Fissel A Bugiel E Osten H J	2005	Thin Solid Films2005，515，：	1
	7	Epitaxial growth of praseodymium oxide on silicon 显示文摘	Osten H J Liu J P Bugiel E Mussig H J Zaumseil P	2001	Mater Sci Eng B2001，87，：	1
	8	Epitaxial praseodymium oxide: a new high-K dielectric显示文摘	Osten H J Bugiel E Fissel A	2003	Solid-State Electronics2003，47，：	1
	9	Epitaxial growth of Pr2O3 on Si (111 ) and the observation of a hexagonal to cubic phase transition during post growth N2 annealing显示文摘	Liu J P Zaumseil P Bugiel E Osten H J	2001	Appl Phys Lett2001，79，：	1
	10	Epitaxial multicomponent rare earth oxide for high-k application显示文摘	Laha A Fissel A Bugiel E Osten H J	2007	Thin Solid Films2007，515，：	1
	11	Growth of an inverse tetragonal distorted SiGe layer on Si (001) by adding small amounts of carbon 显示文摘	Osten H J Bugiel E Zaumseil P	1994	Appl Phys Lett1994，64，25：	1
	12	Epitaxial praseodymium oxide: a new high-k dielectric显示文摘	Osten E J Bugiel E Fissel A	2003	Sol Sta Elec2003，47，12：	1
	13	Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si显示文摘	Rucker H Methfessel M Bugiel E	1994	Phys Rev Lett1994，72，：	1
	14	Influence of N2/H2 plasma treatment on chemical vapor deposited TiN multilayer structures for advanced CMOS technologies显示文摘	Melnik V Wolanski D Bugiel E	2003	Mater Sci Eng2003，102，：	1
	15	Growth of aninverse tetragonaI distorted SiGe Iayer on Si(001)byadding small amounts of carbon显示文摘	OSTEN H J BUGIEL E ZANMSEIL P	1994	Appl Phys Lett1994，64，25：	1
	16	Measurement of stress and relaxation in Si1-x Gex layers by Raman line shift and x-ray diffraction显示文摘	Dietrich B Bugiel E Klatt J	1993	J Appl Phys1993，74，5：	1
	17	Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and X-ray diffraction 显示文摘	DIETRICH B BUGIEL E KLATT J	1993	J Appl Phys1993，74，5：	1

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