|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Luminescence properties of defects in GaN 显示文摘 | Reshchikov Michael A Morkoc Hadis | 2005 | J Appl Phys2005，97，06： | 1 |
| 2 | Temperature Dependence of Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors显示文摘 | Chand N Fischer R Henderson T Klem J Kopp W and Morkoc H | 1984 | Appl Phys Lett1984，，45： | 1 |
| 3 | Large-band-gap SiC,Ⅲ-Ⅴ nitride,and Ⅱ-Ⅵ ZnSe-based semiconductor device technologies显示文摘 | Morkoc H Streite S Gao G B | 1994 | J Appl Phys1994，76，： | 1 |
| 4 | Bacterial endotoxin in blood of dysgalactic sows in relation to microbial status uterus, milk and intestine 显示文摘 | Morkoc A Lund L | 1983 | An Vet Med Ass1983，183，： | 1 |
| 5 | Large-band-gap SiC,Ⅲ-Ⅴ nitride,and Ⅱ-Ⅵ ZnSe-based semiconductor device technologies显示文摘 | STRITE S GAO G B | 1994 | J Appl Phys1994，76，3： | 1 |
| 6 | GaN-based modulation doped FETs and UV detedtors显示文摘 | | 2002 | Solid-State Electronics2002，46，： | 1 |
| 7 | GaN, AlN, and InN: A review 显示文摘 | STRITE S MORKOC H | 1992 | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures1992，10，4： | 1 |
| 8 | ZnO devices and applications: a review of current status and future prospects显示文摘 | OZGUR HOFSTETTER U MORKOC H | 2010 | Proceedings of the IEEE2010，98，7： | 1 |
| 9 | 查看详情显示文摘 | Kishino K Unlti M S Chyi J I Reed J Arsenault L Morkoc H | | 0，，： | 1 |
| 10 | GaN, AlN, and InN: A Review 显示文摘 | Strite S Morkoc H | 1992 | J Vac Sci Technol B1992，10，： | 1 |
| 11 | A review显示文摘 | Strite S Morkoc J GaN | 1992 | J Vac Sci Technol B1992，10，： | 1 |
| 12 | Emerging gallium nitride based devices 显示文摘 | Mohammad S N Salvador A Morkoc H | 1995 | Proe IEEE 831995，83，10： | 1 |
| 13 | Comparative analysis of the hight-frequency performance of Si/Si1-xGex heterojunction bipolar and Si Bipolar transistors 显示文摘 | Gao G B Morkoc H | 1992 | Solid State Electronics1992，35，8： | 1 |
| 14 | Microwave Ferrites, part 1 : Fundamental Properties显示文摘 | Ozglir U Alivov Y Morkoc H | 2009 | Journal of Materials Science: Materials in Electronics2009，20，9： | 1 |
| 15 | Large-band-gap SiC, Ⅲ-Ⅴ nitride,and Ⅱ-Ⅵ ZnSe-based semicondctor device technologies显示文摘 | Morkoc H Strite S Gao G B | 1994 | J Appl Phys1994，76，3： | 1 |
| 16 | 查看详情显示文摘 | Gao G B Fan Z F Morkoc H Phys | | 0，，： | 1 |
| 17 | Large-band-gap SiC,Ⅲ-Ⅴ nitride,and II-VI ZnSe-based semiconductor device teclmologies显示文摘 | STRITE S GAO G B | 1994 | JAppl Phys1994，76，3： | 1 |
| 18 | Emitter ballasting resistance design for, and current handing capability of AlGaAs power HBT 显示文摘 | Gao G-B Unlu M S Morkoc H | 1991 | IEEE Trans Elec Dev1991，38，2： | 1 |
| 19 | GaN,AlN,and InN:a review显示文摘 | Strite Morkoc H | 1992 | J Vac Sci Technol B1992，10，： | 1 |
| 20 | Ferromagnetism of ZnO and GaN : a review 显示文摘 | Liu C Yun F Morkoc H | 2005 | Journal of Materials Science: Materials in Electronics2005，，16： | 1 |
您所在的机构暂未开通此部分的功能，请联系管理员