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64篇 您的检索式:作者名="STRITE S"
    题名 作者 年代 出处 被引量
1GaN, AlN, and InN: A review显示文摘Strite S Morko H 1992J Vac Sci Technol1992,10,4:1
2Large-band-gap SiC,Ⅲ-Ⅴ nitride,and Ⅱ-Ⅵ ZnSe-based semiconductor device technologies显示文摘 STRITE S GAO G B 1994J Appl Phys1994,76,3:1
3GaN Grown on Hydrogen Plasma Cleaned 6H-SiC Substrates显示文摘Lin M E Strite S Aganwal A 1993Appl Phys Lett1993,62,7:1
4GaN, AlN, and InN: A review 显示文摘STRITE S MORKOC H 1992Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures1992,10,4:1
5GaN, AlN, and InN: A Review 显示文摘Strite S Morkoc H 1992J Vac Sci Technol B1992,10,:1
6A review显示文摘Strite S Morkoc J GaN 1992J Vac Sci Technol B1992,10,:1
7查看详情显示文摘Unlti M S Strite S 0,,:1
8Resonant cavity enhanced photonic devices 显示文摘M S (U)nlü S Strite 1995Journal of Applied Physics1995,78,2:1
9GaN Grown on Hydrogen Plasma Cleaned 6H- SiC Substrates显示文摘 Strite S Aganwal A 1993Appl Phys Lett1993,62,7:1
10Large-band-gap SiC, Ⅲ-Ⅴ nitride,and Ⅱ-Ⅵ ZnSe-based semicondctor device technologies显示文摘Morkoc H Strite S Gao G B 1994J Appl Phys1994,76,3:1
11Large-band-gap SiC,Ⅲ-Ⅴ nitride,and II-VI ZnSe-based semiconductor device teclmologies显示文摘 STRITE S GAO G B 1994JAppl Phys1994,76,3:1
12Resonant cavity enhanced photonic device显示文摘(U)nl(u) S Strite S 1995J Appl Phys1995,78,2:1
13GaN Grown on Hydrogen Plasma Cleaned 6H-SiC Substrates显示文摘Lin M E Strite S Aganwal A 1993Appl Phys Lett1993,62,7:1
141arge-band gap SiC, Ⅲ-Ⅴ nitride,and II-VI ZnSe-based semiconductor device technologies显示文摘H Morkoc S Strite G B Gao 1994J Appl Phys1994,,76:1
15Large-band-gap SiC, III-V nitride, and II-VI ZnSe-bascd semiconductor device technologies显示文摘Morkoc H Strite S Gao G B 1994J Appl Phys1994,76,3:1
16GaN, AIN and InN: a review显示文摘Strite S Morkoc H 1992J Vac Sci Technol B1992,10,4:1
17查看详情显示文摘Strite S Morkoc H 0,,:1
18GaN AlN and InN显示文摘Strite S Morkoc H 1992A review J Vac Sci Technol B1992,10,10:1
19GaN, AlN and InN: A review显示文摘STRITE S MORKOQ H 1992J Vac Sci Technol1992,10,4:1
20GaN, AlN and InN: A review显示文摘S Strite H Morkoq 1992J Vac Sci Techol1992,10,4:1
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