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| 1 | Reactive Deposition Epitaxial Growth ofβ-FeSi_(2) Film on Si(001):in situ Observation by Reflective High Energy Electron Diffraction显示文摘Reactive deposition epitaxial growth ofβ-FeSi_(2) film on Si(001)has been studied by in situ observation of reflective high energy electron diffraction.Metastable strained phase was observed at initial stages.Surface roughness due to the islanding was observed during the deposition.The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased. | WANG Lianwei LIN Chenglu SHEN Qinwo NI Rushan ZOU Shichang | 1995 | Chinese Physics Letters1995，12，10： | 2 |
| 2 | Security analysis of remote password authentication schemes for multi-server ar- chitecture using neural networks显示文摘 | Liu Chenglian Lin Chenglu Ham Lien | 2012 | Advanced Science Letters2012，7，1： | 1 |
| 3 | Low temperature preparation of barium titanate tin films by a novel sol-gel-hydrothermal method显示文摘 | Zeng Jianming Lin Chenglu Li Jinhua | 1998 | Materials Letters1998，38，： | 1 |
| 4 | The new technology for improving heat effect of pyroelectric infrared detector 显示文摘 | Song Zhitang Feng Songlin Lin Chenglu | 2004 | Ceramics International2004，30，： | 1 |
| 5 | Migration of Chinese consumption values: Traditions, modernization, and cultural renaissance 显示文摘 | Wang Chenglu Lin Xiaohua | 2009 | Journal of Business Ethics2009，88，3： | 1 |
| 6 | A comparison of pulsed-laser-deposited and ion-beam-enhan-ced-deposited AlN thin films for SOI application显示文摘 | Men Chuanling Lin Chenglu | 2006 | Materials Science and Engineering:B2006，133，13： | 1 |
| 7 | Low temperature preparation of barium titanate thin films by a novel sol-gel-hydrothermal method显示文摘 | Zeng Jianming Lin Chenglu Li Jinhua | 1998 | Materials Letters1998，38，： | 1 |
| 8 | Valence reduction procedure from sol-gel V2O5 to VO2 thin films显示文摘 | Li Jinhua Lin Chenglu | 2002 | Applied Surface Science2002，191，14： | 1 |
| 9 | 显示文摘 | Lin Chenglu Zhu Wei Zou Shichang | 1990 | Appl Phys Lett1990，56，： | 1 |
| 10 | Valence reduction process from Sol-Gel V2O5 to VO2 thin films显示文摘 | Yuan Ningyi Li Jinhua Lin Chenglu | 2002 | Applied surface science2002，191，14： | 1 |
| 11 | N + plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperature显示文摘 | Xiaobo Ma Weili Liu Chao Chen Jiayi Xu Zhitang Song Chenglu Lin | 2009 | Materials Science in Semiconductor Processing2009，，4： | 1 |
| 12 | Recent Progress of Synchrotron X-Ray Imaging and Diffraction on the Solidification and Deformation Behavior of Metallic Materials显示文摘Characterizing the microstructure and deformation mechanism associated with the performances and properties of metallic materials is of great importance in understanding the microstructure-property relationship.The past few decades have witnessed the rapid development of characterization techniques from optical microscopy to electron microscopy,although these conventional methods are generally limited to the sample surface because of the intrinsic opaque nature of metallic materials.Advanced synchrotron radiation(SR)facilities can produce X-rays with strong penetrability and high spatiotemporal resolution,and thereby enabling the non-destructive visualization of full-field structural information in three dimensions.Tremendous endeavors were devoted to the 3 rd generation SR over the past three decades,in which X-ray beams have been focused down to 100 nm.In this paper,recent progresses on SR-related characterization technologies were reviewed,with particular emphases on the fundamentals of synchrotron X-ray imaging and synchrotron X-ray diffraction,as well as their applications in the in situ observations of material preparation(e.g.,in situ dendrite growth during solidification)and service under extreme environment(e.g.,in situ mechanics).Future innovations toward next-generation SR and newly emerging SRbased technologies such as dark-field X-ray microscopy and Bragg coherent X-ray diffraction imaging were also advocated. | Youhong Peng Kesong Miao Wei Sun Chenglu Liu Hao Wu Lin Geng Guohua Fan | 2022 | Acta Metallurgica Sinica(English Letters)2022，35，1： | 0 |
| 13 | Synthesis of β-FeSi_(2) Film by Reactive Deposition-Solid Phase Epitaxy显示文摘Reactive deposition-solid phase epitaxy has been developed for the epitaxial growth of thick β-FeSi_(2) film.Compared with the solid phase epitaxy,the crystal quality was improved.The orientation relationship mainly depends on the depositing condition.Observation by transmission electron microscope revealed the polycrystalline nature and the mean crystallite size was about 200nm. | WANG Lianwei SHEN Qinwo CHEN Xiangdong LIN Xian LIN Chenglu ZOU Shichang | 1995 | Chinese Physics Letters1995，12，5： | 0 |
| 14 | Slow Positron Annihilation in Silicide Films Formed by Solid State Interaction of Co/Ti/Si and Co/Si显示文摘Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si.Variable-energy(0-20 keV)positrons were implanted into samples at different depths.The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies is characterized by a line-shape parameter,S.It was found that the measured S parameters are sensitive to thin film reaction and crystalline characteristics.In particular,the S parameter of epitavial CoSi_(2)formed by the ternary reaction is quite different from that of the polycrystalline CoSi_(2)formed by direct reaction of Co with Si. | LIU Ping LIN Chenglu ZHOU Zuyao ZOU Shichang WENG Huiming HAN Rongdian LI Bingzong | 1994 | Chinese Physics Letters1994，11，4： | 0 |
| 15 | Investigation of SiGe-on-Insulator Novel Structure显示文摘SiGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (SIMOX) starting from pseuodomorphic SiGe thin film without graded SiGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of SiGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax SiGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation,Ge atoms diffuse into the top Si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained Si. | Lin Chenglu Liu Weili An Zhenghua Di Zengfeng Zhang Miao | 2004 | Journal of Rare Earths2004，22，z2： | 0 |
| 16 | Influence of Rapid Thermal Annealing on Structural and Interfacial Properties of Lead-Zirconate-Titanate Thin Films Prepared by Excimer Laser Deposition显示文摘Lead zirconate titanate thin films were prepared by pulsed excimer laser deposition on silicon substrates.Rapid thermal annealing was used to improve its properties.Structural and interfacial characteristics of the films before and after annealing were investigated by x-ray diffraction,Rutherford backscattering spectrometry and automatic spreading resistance。 | ZHENG Lirong CHEN Yiqing LIN Chenglu ZOU Shichang | 1994 | Chinese Physics Letters1994，11，8： | 0 |
| 17 | Microstructural Characterization of Epitaxial GaAs on Separation-by-Implanted-Oxygen Substrates显示文摘The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated.Cross-sectional trajismission electron microscopyt Rutherford backsca,ttering and channeling techniques have been employed to characterize these layers.Microtwins and threading dislocation are the predominant defects in the layers.Most of the misfit dislocation are conGned within the Ga.As and Si interface region by forming a type of edge dislocation. | ZHU Wenhua LIN Chenglu NI Rushan LI Aizhen ZOU Shichang P.L.F.Hemment | 1991 | Chinese Physics Letters1991，8，10： | 0 |
| 18 | Investigation of silicon on insulator fabricated by two-step O^+ implantation显示文摘In this paper,we investigated the dose window of forming a continuous buried oxide(BOX) layer by single implantation at the implantation energy of 200 keV. Then,an improved two-step implantation process with second implantation dose of 3×1015 cm-2 was developed to fabricate high quality separation by implanted oxygen(SIMOX) silicon on insulator(SOI) wafers. Compared with traditional single implantation,the implantation dose is reduced by 18.2%. In addition,the thickness and uniformity of the BOX layers were evaluated by spectroscopic ellipsometry. Defect-free top Si as well as atomic-scale sharp top Si/buried oxide interfaces were observed by transmission electron microscopy,indicating a high crystal quality and a perfect structure of the SOI fabricated by two step implantation. The top Si/BOX interface morphology of the SOI wafers fabricated by single or two-step implantation was also investigated by atomic force microscopy. | WEI Xing XUE ZhongYing WU AiMin WANG Xiang LI XianYuan YE Fei CHEN Jie CHEN Meng ZHANG Box LIN ChengLu ZHANG Miao WANG Xi | 2011 | Chinese Science Bulletin2011，56，4： | 0 |
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