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4篇 您的检索式:作者名="K.HOSSAIN"
    题名 作者 年代 出处 被引量
1Comparative Assessment of the Effect of Wastewater Sludge Biochar on Growth,Yield and Metal Bioaccumulation of Cherry Tomato显示文摘To investigate the potential effects of wastewater sludge and sludge biochar on growth, yield and metal bioaccumulation of cherry tomato(Lycopersicon esculentum L.), a pot experiment was carried out under greenhouse environment with three different treatments,control soil(CP), soil with wastewater sludge(SS) and soil with sludge biochar(SB), to reveal the comparative effect between the amendments of wastewater sludge and sludge biochar. The soil used for pot experiment was Chromosol. Wastewater sludge and sludge biochar produced through pyrolysis process at 550?C were applied at 10 t ha-1. No significant difference was found in growth and production of cherry tomatoes between wastewater sludge and sludge biochar applications to the soil. The accumulation rates of metals in the fruits were lower in the treatment with sludge biochar than in the treatment with wastewater sludge. The study highlights the benefits of risk mitigation from toxic metal accumulation in fruits using wastewater sludge and sludge biochar as soil conditioners.Mustafa K.HOSSAIN Vladimir STREZOV Peter F.NELSON 2015Pedosphere2015,25,5:7
2Subjective fatigue and subjective sleepiness: two independent consequences of sleep disorders?显示文摘JAMIL L.HOSSAIN PARVEZAHMAD LAWRENCE W.REINISH LEONIDKAYUMOV NAHEED K.HOSSAIN COLIN M.SHAPIRO 2005Journal of Sleep Research2005,,3:1
3Effect of substrate miscut on the electron mobility in InSb(001) structures on Ge and Ge-on-insulator substrates显示文摘InSb epilayers and InSb/Al0.20In0.80Sb quantum wells were grown on Ge(001)substrates and Ge-on-insulator(GeOI)-on-Si(001)substrates by molecular beam epitaxy.Growth on both on-axis and 4°-off-axis substrate orientations was studied.Anti-phase domains were formed when InSb films were grown on on-axis substrates,but suppressed significantly by the use of 4°-off-axis substrates.Such off-axis substrates also reduced the densities of micro-twin defects and threading dislocations.The defect reduction resulted in an increase in the room-temperature electron mobility from 37,000 to 59,000 cm2/Vs in 4.0-lm-thick InSb epilayers and from 10,000 to20,000 cm2/Vs in 25-nm-thick InSb quantum wells on Ge(001)and GeOI-on-Si(001)substrates.M.C.Debnath T.D.Mishima M.B.Santos K.Hossain 2014Chinese Science Bulletin2014,59,4:0
4Controllable optical emission wavelength in all-inorganic halide perovskite alloy microplates grown by two-step chemical vapor deposition显示文摘All-inorganic halide perovskites(IHP),CsPbX_(3)(X=Cl,Br,I)exhibiting efficient optical emissions within the spectral range of 410 to 730 nm are potential candidates for many optoelectronic devices.Anion alloying of these IHPs is expected to achieve tunable emission wavelength covering the entire visible spectrum.Here,we developed a two-step chemical vapor deposition(CVD)process for growing quaternary IHP CsPbX_(3)(X=Cl/Br and Br/I)alloys.By exploiting the fast diffusion of halide anions in IHPs,the alloy composition can be precisely controlled by the growth time of the respective layers once the growth of the individual ternary IHP is optimized.Hence complexities in the multi-parameter optimization in the conventional CVD growth of quaternary alloys can be mitigated.Using this process,we synthesized single crystalline,homogeneous and thermally stable CsPbCl3_((1−X))Br_(3x)and CsPbBr3_((1−X))I_(3x)perovskites alloy microplates and demonstrated continuously tunable emission covering the spectrum from 428 to 715 nm by varying the halide compositions in the alloys.These alloy microplates also exhibit room temperature amplified spontaneous emissions(ASE)along with strong photonic discharges from the microplate’s edges and hence are potentially useful as a gain medium as well as optical cavities for emissions with wavelengths covering the visible spectrum.Mohammad K.Hossain Pengfei Guo Wayesh Qarony Yuen H.Tsang Chaoping Liu Sai W.Tsang Johnny C.Ho Kin M.Yu 2020Nano Research2020,13,11:0
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