维普期刊资源整合服务平台（V6.5）

维普中文期刊产品整合服务

1篇 您的检索式：作者名="M.C.Debnath"

选中清除导出查看参考文献查看引证文献引用追踪共1页首页上一页第1页下一页末页 /1 跳转

		题名	作者	年代	出处	被引量
	1	Effect of substrate miscut on the electron mobility in InSb(001) structures on Ge and Ge-on-insulator substrates显示文摘InSb epilayers and InSb/Al0.20In0.80Sb quantum wells were grown on Ge(001)substrates and Ge-on-insulator(GeOI)-on-Si(001)substrates by molecular beam epitaxy.Growth on both on-axis and 4°-off-axis substrate orientations was studied.Anti-phase domains were formed when InSb films were grown on on-axis substrates,but suppressed significantly by the use of 4°-off-axis substrates.Such off-axis substrates also reduced the densities of micro-twin defects and threading dislocations.The defect reduction resulted in an increase in the room-temperature electron mobility from 37,000 to 59,000 cm2/Vs in 4.0-lm-thick InSb epilayers and from 10,000 to20,000 cm2/Vs in 25-nm-thick InSb quantum wells on Ge(001)and GeOI-on-Si(001)substrates.	M.C.Debnath T.D.Mishima M.B.Santos K.Hossain	2014	Chinese Science Bulletin2014，59，4：	0

返回顶部每页显示：

共1页首页上一页第1页下一页末页 /1 跳转

goolge学术搜索-维普

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费