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34篇 您的检索式：作者名="GHIBAUDO"

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	题名	作者	年代	出处	被引量
1	New method for the extraction of MOSFET parameters 显示文摘	GHIBAUDO G	1988	Elec Lett1988，24，9：	1
2	Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress显示文摘	CALLON C REIMBOLD G GHIBAUDO G	2004	IEEE Transactions on Electron Devices2004，51，8：	1
3	Investigation on trapping and detrapping mechanisms in HfO2 films 显示文摘	MITARD J LEROUX C GHIBAUDO G	2005	Microelectronic Engineering2005，80，7：	1
4	A new model for the current factor mismatch in the MOS transistor 显示文摘	Difrenza R Llinares P Ghibaudo G	2003	Solid-state Electronics2003，47，：	1
5	Is colpocleisis still indicated for the treatment of female genitourinary prolapse7 显示文摘	Ghibaudo C Hocke C	2005	Prog Urol2005，15，2：	1
6	Realization of a 980-nm/1550-nm pump-signal (De) multiplexer made by ionexchange on glass using a segmented asymmetric Y-Junction显示文摘	Bucci D Grelin J Ghibaudo E Broquin J-E		0，，09：	1
7	Electrical properties in low temperature range (5K-300K) of tantalum oxide dielectric MIM capacitors显示文摘	Deloffre E Montès L Ghibaudo G	2005	Microelectronics Reliability2005，45，56：	1
8	Improved analysis of low-frequency noise in field effect MOS-transistors 显示文摘	GHIBAUDO G ROUX O NGUYEN-DUC C	1991	Phys Sta Sol1991，124，2：	1
9	Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress 显示文摘	GALLON C REIMBOLD G GHIBAUDO G	2004	IEEE Transactions on Electron Devices2004，51，8：	1
10	Investigation on trapping and detrapping mechanisms in HfO2 films显示文摘	Mitard J Leroux C Ghibaudo G	2005	Microelectronic Engineering2005，80，：	1
11	Reduction of Kink effect in short-channel MOS transistors显示文摘	I M Hafez G Ghibaudo F Balestra	1990	IEEE Electron Device Letters1990，11，3：	1
12	Investiga- tion of SiOz/HfOz gate stacks for application to non- volatile memory devices显示文摘	Buckley J De Salvo B Ghibaudo G	2005	Solid-state Electronics2005，49，11：	1
13	A new hot carrier degradation law for MOSFET lifetime prediction显示文摘	MARCHAND B GHIBAUDO G BALESTRA F		0，，：	1
14	Experimental and theoretical investigation of nanocrystal and nitride-trap memory devices 显示文摘	De SALVO B GHIBAUDO G PANANAKAKIS G	2001	IEEE Transactions on Electron Devices2001，48，8：	1
15	On the understanding of electron and hole mobility models from room to liquid helium temperatures 显示文摘	EMRANI A BALESTRA F GHIBAUDO G	1994	Sol Sta Elee1994，37，10：	1
16	Acceleraled wear-out of ultra-thin gate oxides after irradiation显示文摘	Andrea Cester Salvatore Cimino Alessandro Paccagnella Gerard Ghibaudo Gabriella Ghidini Jeffrey Wyss	2003	IEEE Trans Nucl Sci2003，50，3：	1
17	On thehigh electric field mobility behavior in Si MOSFET's from room to liquid helium temperature 显示文摘	RAIS K BALESTRA F GHIBAUDO G	1994	Phys Sta Sol (a)1994，145，1：	1
18	Characterization of GB Virus B Polyprotein Processing Reveals the Existence of a Novel 13-kDa Protein with Partial Homology to Hepatitis C Virus p7 Protein显示文摘	Ghibaudo D Cohen L Penin F	2004	J Biol Chem2004，279，24：	1
19	Characterization and modeling of silicon CMOS transistor operation at low temperature 显示文摘	GHIBAUDO G BALESTRA F	1996	Le Journal de Physique IV1996，06，3：	1
20	Temperature dependence of drain-induced barrier lowering in deep submicrometre MOSFETs 显示文摘	FIKRY W GHIBAUDO G DUTOIT M	1994	Elec Lett1994，30，11：	1

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