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56篇 您的检索式:作者名="Faran"
    题名 作者 年代 出处 被引量
1微通道内液滴/气泡破裂动力学分析显示文摘微化学工程与技术是现代化学工程学科的前沿领域。微通道内液滴及气泡破裂动力学是决定多相过程并行微通道数目放大的基础与难点。破裂流型转换条件、界面动力学和尺寸调控等三方面是微通道内液滴与气泡破裂动力学的主要研究对象。讨论了对称微通道、非对称微通道、多级微通道、旁路微通道、含有障碍物的微通道内气泡和液滴破裂行为及影响因素,指出了目前微尺度下气泡与液滴破裂行为相关研究工作存在的不足,并对该领域未来的发展进行了展望。付涛涛 徐子懿 Tahir Muhammad Faran Cumbula Armando José 姜韶堃 朱春英 马友光 2018化工学报2018,69,11:4
2Experimental Study of the reaction zone at boron nitride ceramic-Ti metal interface 显示文摘FARAN E GOTMAN I GUTMANAS E Y 2000Mater Sci Eng A2000,288,1:1
3Coating of BN via solid state reaction with Ti powder 显示文摘FARAN E GOTMAN I GUTMANAS E 2000Mater Lett2000,43,4:1
4Sound scattering by solid cylinders and spheres显示文摘FARAN J J 1951Journal Acoustical Society of America1951,23,4:1
5Defining a significant stenosis in an autologous radio- cephalic arteriovenous fistula for hemodialysis显示文摘Faran Fahrtash Lukas Kairaitis Simon Gruenewald 2011Semin Dialysis2011,24,2:1
6Sound Scattering by Solid Cylinders and Spheres显示文摘FARAN JR James J 1951J Acoust Soc Am1951,23,4:1
7A reflection principle for proper holomorphic mappings and geometric invariants显示文摘James J. Faran 1990Mathematische Zeitschrift1990,,1:1
8Prevalence and causes of visual impairment and blindness in the south western region of Saudi Arabia 显示文摘Faran MF Rajhi AA Omar OM 1993Int Ophthalmology1993,17,:1
9对称分支并行微通道中气液两相流的均匀性规律显示文摘采用高速摄像系统研究了对称分支形并行微通道内气液两相流及弹状气泡均匀性规律。实验中分别采用含0.3%SDS的甘油-水溶液与氮气作为液相和气相。观察到弹状流和泡状流两种流型,作出了由两相操作条件构成的流型图及流型转变线。结果表明,气泡非均匀性主要由两微通道内流体之间的相互作用、下游通道中流体动力学的反馈作用以及通道制造误差造成。随液相黏度增大,气泡均匀性变好;在高液相流量以及低气相压力下操作,气泡尺寸分布更易达到均匀。基于压力降守恒原理和微通道内气液两相流阻力模型,构建了两通道中气泡尺寸的预测模型。沈秋颖 Tahir Muhammad Faran Cumbula Armando José 付涛涛 姜韶堃 朱春英 马友光 2018化工学报2018,69,11:1
10Experimental study of the reaction zone at boron nitride ceramic-Ti metal interface 显示文摘FARAN E 2000Materials Science and Engineering2000,288,:1
11Coating of BN via solid state reaction with Ti powder 显示文摘FARAN E GOTMAN I 2000Materials Letters2000,43,:1
12Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap显示文摘As the proportion of interfaces increases rapidly in nanomaterials,properties and quality of interfaces hugely impact the performance of advanced semiconductors.Here,the effect of interfaces is explored by comparatively studying two InAs/AlSb superlattices with and without the thin InAsSb layers inserted inside each InAs layers.Through strain mapping,it indicates that the addition of interfaces leads to an increase of local strain both near interfaces and inside layers.Meantime,owing to the creation of hole potential wells within the original electron wells,the charge distribution undergoes an extra electron-hole alternating arrangement in the structure with inserted layers than the uninserted counterpart.Such a feature is verified to enhance electron-hole wave function overlap by theoretical simulations,which is a must for better optical performance.Furthermore,with an elaborate design of the inserted layers,the wave function overlap could be boosted without sacrificing other key device performances.Chenyuan Cai Yunhao Zhao Faran Chang Xuebing Zhao Liting Yang Chongyun Liang Guowei Wang Zhichuan Niu Yi Shi Xianhu Liu Yuesheng Li Renchao Che 2020Nano Research2020,13,6:1
13Steroid treatment in ARDS: a critical appraisal of the ARDS network trial and the recent literature显示文摘G. Umberto Meduri Paul E. Marik George P. Chrousos Stephen M. Pastores Wiebke Arlt Albertus Beishuizen Faran Bokhari Gary Zaloga Djillali Annane 2008Intensive Care Medicine2008,,1:1
14Coating of BN via solid state reaction with Ti powder显示文摘FARAN E GOTMAN I GUTMANAS E Y 2000Materials Letters2000,4,43:1
15Maps from the two-ball to the three-ball显示文摘James J. Faran 1982Inventiones Mathematicae1982,,3:1
16Cardi- ac resynchronisation therapy in patients with end-stage heart failure- long-term follow-up 显示文摘Faran A Lewicka-Nowak E Dabrowska-Kugacka AA 2008Kardiol Pol2008,66,1:1
17Late recovery from permanent traumatic vegtative state heralded by event-related potentials 显示文摘Faran S Vatine JJ Lazary A 2006J Neural Neurosurg Psychiatry2006,77,8:1
18An overview of electronic warefare in radar systems显示文摘Faran A B Madiha J 2013IEEE Transactions on Aerospace and Electronic Sys- tems2013,12,8:1
19Coating of BN via solid state reaction with Ti powder 显示文摘Faran E Gotman I Gutmanas E Y 2000Materials Letters2000,43,24:1
20The false memory and the mirror effects: The role of familiarity and backward association in creating false recollections 显示文摘Anaki D Faran Y Ben-Shalom D 2005Journal of Memory and Language2005,52,1:1
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