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| 1 | Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays显示文摘Solar-blind ultraviolet(UV)photodetectors(PDs)have attracted tremendous attention in the environmental,industrial,military,and biological fields.As a representative Ill-nitride material,AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties,such as tunable wide bandgaps for intrinsic UV detection.In recent decades,a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection.As integrated optoelectronic technology advances,AlGaN-based focal plane arrays(FPAs)are manufactured and exhibit outsta nding solar-blind imaging capability.Con sidering the rapid development of AlGaN detection techniques,this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs.First,the basic physical properties of AlGaN are presented.The epitaxy and p-type doping problems of AlGaN alloys are then discussed.Diverse PDs,including photoconductors and Schottky,metal-semiconductor-metal(MSM),p-i-n,and avalanche photodiodes(APDs),are dem on strated,and the physical mechanisms are analyzed to improve device performance.Additionally,this paper summarizes imaging technologies used with AlGaN FPAs in recent years.Benefit!ng from the development of AlGaN materials and optoelectronic devices,solar-blind UV detection technology is greeted with significant revolutions. | Qing Cai Haifan You Hui Guo Jin Wang Bin Liu Zili Xie Dunjun Chen Hai Lu Youdou Zheng Rong Zhang | 2021 | Light(Science & Applications)2021，10，6： | 4 |
| 2 | High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD显示文摘We fabricated p-i-n tunnel junction(TJ)contacts for hole injection on c-plane green micro-light-emitting diodes(micro-LEDs)by a hybrid growth approach using plasma-assisted molecular beam epitaxy(PA-MBE)and metal–organic chemical vapor deposition(MOCVD).The TJ was formed by an MBE-grown ultra-thin unintentionally doped In Ga N polarization layer and an n^(++)∕n^(+)-GaN layer on the activated p^(++)-Ga N layer prepared by MOCVD.This hybrid growth approach allowed for the realization of a steep doping interface and ultrathin depletion width for efficient inter-band tunneling.Compared to standard micro-LEDs,the TJ micro-LEDs showed a reduced device resistance,enhanced electroluminescence intensity,and a reduced efficiency droop.The size-independent J-V characteristics indicate that TJ could serve as an excellent current spreading layer.All these results demonstrated that hybrid TJ contacts contributed to the realization of high-performance micro-LEDs with long emission wavelengths. | YAOZHENG WU BIN LIU FEIFAN XU YIMENG SANG TAO TAO ZILI XIE KE WANG XIANGQIAN XIU PENG CHEN DUNJUN CHEN HAI LU RONG ZHANG YOUDOU ZHENG | 2021 | Photonics Research2021，9，9： | 2 |
| 3 | AlGaN solar‐blind APD with low breakdown voltage显示文摘A p-i-i-n type AlG a N heterostructure avalanche photodiodes(APDs)is proposed to decrease the avalanche breakdown voltage and to realize higher gain by using high-Al-content AlG aN layer as multiplication layer and low-Al-content AlG aN layer as absorption layer.The calculated results show that the designed APD can significantly reduce the breakdown voltage by almost 30%,and about sevenfold increase of maximum gain compared to the conventional Al GaN APD.The noise in designed APD is also less than that in conventional APD due to its low dark current at the breakdown voltage point.Moreover,the one-dimensional(1D)dual-periodic photonic crystal(PC)with anti-reflection coating filter is designed to achieve the solar-blind characteristic and cutoff wavelength of 282 nm is obtained. | Kexiu Dong Dunjun Chen Yangyi Zhang Yizhe Sun Jianping Shi | 2017 | 光电工程2017，44，4： | 1 |
| 4 | Deformation behaviours of laser curve bending of sheet metals显示文摘 | Dunjun Chen Shichun Wu Miaoquan Li | 2004 | Journal of Materials Processing Technology2004，148，： | 1 |
| 5 | An adaptive prediction model of grain size for the forging of Ti–6Al–4V alloy based on fuzzy neural networks显示文摘 | Li Miaoquan Chen Dunjun Xiong Aiming Long Li | 2002 | Journal of Materials Processing Tech2002，，3： | 1 |
| 6 | Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes显示文摘The reverse leakage characteristics of AlGaNbased ultraviolet light-emitting diodes fabricated on sapphire substrate are studied by temperature-variable current–voltage(I–V)measurement from 300 to 450 K.At low-reverse bias range(0–0.5 V),the reverse leakage current exhibits tunneling characteristics.Meanwhile,under a more negative reverse bias range([0.5 V),the log(I)–log(V)plots exhibit close-to-linear dependency,which is in good agreement with the transport mechanism of space-charge limited current.A phenomenological leakage current model focusing on electron transmission primarily through continuous defect band formed by linear defects like dislocations is suggested to explain the reverse current–voltage characteristics. | Rong Jiang Dawei Yan Hai Lu Rong Zhang Dunjun Chen Youdou Zheng | 2014 | Chinese Science Bulletin2014，59，12： | 1 |
| 7 | Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection显示文摘In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated.With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 × 10~4, and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electricfield-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes. | WEIZONG XU YATING SHI FANGFANG REN DONG ZHOU LINLIN SU QING LIU LIANG CHENG JIANDONG YE DUNJUN CHEN RONG ZHANG YOUDOU ZHENG HAI LU | 2019 | Photonics Research2019，7，8： | 1 |
| 8 | An adaptive prediction model of grain size for the forging of Ti-6Al-4V alloy based on fuzzy neural networks 显示文摘 | Li Miaoquan Chen Dunjun Xiong Aiming | 2002 | Journal of Materials Processing Technology2002，，123： | 1 |
| 9 | Miscibility Calculation of GaN1-xPx Ternary Alloys显示文摘A theoretical calculation of the miscibility gap with considering the mismatch strain and elastic parameters was performed for the GaN1-xPx ternary alloys on (0001) GaN/sapphire substrates based on the strictly regular solution model. The calculated results show that the boundary of the spinodal isotherm shifts from x=0.06 to x=0.25 at the growth temperature of 1200 K as the strain factor increases from 0 to 1, indicating that the strain in the GaN1-xPx layers can suppress the phase separation. Meanwhile, with the increase of the effective elastic parameters of GaN and GaP, the available maximum P content also increases slightly at the growing temperature. | Zhang Kaixiao Chen Dunjun Zhu Weihua Lin Jianwei Zhang Rong Zheng Youdou | 2006 | Journal of Rare Earths2006，24，z1： | 0 |
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