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21篇 您的检索式：作者名="DIMOULAS A"

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	题名	作者	年代	出处	被引量
1	HfO2 high- k gate dielectrics on Ge (100) by atomic oxygen beam deposition 显示文摘	DIMOULAS A MAVROU G VELLIANITIS G	2005	APL2005，86，03：	1
2	Electrical properties of Y2O3 high-kappa gate dielectric on Si (001):The influence of postmetallization annealing显示文摘	Ioannou-Sougleridis V Vellianitis G Dimoulas A		0，，：	1
3	Direct Heteroepitaxy of Crystalline Y2O3 on Si (001) for High -k Gate Dielectric Applications 显示文摘	DIMOULAS A VELLIANITIS G TRAVLOS A	2001	J Appl Phys2001，90，8：	1
4	HfO2high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition显示文摘	Dimoulas A Mavrou G Vellianitis G	2005	Appl Phys Lett2005，86，03：	1
5	Effects on surface morphology of ep- itaxial Y203 layers on Si (001) after post growth annealing 显示文摘	loannou-Sougleridis V Constantoudis V Alexe M Scholz R Vellianitis G Dimoulas A	2004	Thin Solid Films2004，468，12：	1
6	Serial determinations of neutrophil CD64 expression for the diagnosis and monitoring of sepsis in critically ill patients 显示文摘	Dimoula A Pradier O Kassengera Z	2014	Clin Infect Dis2014，58，6：	1
7	Structural evolution of single-layer films during deposition of silicon on silver: a first-principles study显示文摘	D Kaltsas L Tsetseris A Dimoulas	2012	Journal of Physics: Condensed Matter2012，，：	1
8	Serial determinations of neutrophil C1364 expression for the diagnosis and monitoring of sepsis in critically ill patients 显示文摘	Dimoula A Pradier O Kassengera Z	2014	Clin Infect Dis2014，58，6：	1
9	HfO2 high-x gate dielectrics on Ge(100) by atomic oxygen beam deposition显示文摘	DIMOULAS A MAVROU G VELLIANTIS G	2005	Appl Phys Lett2005，86，03：	1
10	Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): dependence on growth parameters显示文摘	Dimoulas A Vellianitis G Travlos A	2002	J Appl Phys2002，92，1：	1
11	Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-k gate dielectric applications显示文摘	Dimoulas A Travlos A Vellianitis G	2001	J Appl Phys2001，90，8：	1
12	Serial determinations of neutrophil CD64expression for the diagnosis and monitoring of sepsis in criticallyⅢpatients显示文摘	Dimoula A Pradier O Kassengera Z	2014	Clin Infect Dis2014，58，6：	1
13	Serial determi- nations of neutrophil CD64 expression for the diagnosis and monitoring of sepsis in critically ill patients 显示文摘	Dimoula A Pradier O Kassengera Z	2014	Clin InfectDis2014，58，6：	1
14	Fermi-level pinning and charge neutrality level in germanium 显示文摘	Dimoulas A Tsipas P Sotiropoulos A	2006	Applied Physics Letters(S0003-6951)2006，89，25：	1
15	La2Hf2O7high-k gate dielectric grown directly on Si(001) by molecu-lar-beam epitaxy显示文摘	Dimoulas A Vellianitis G Mavrou G Apostolopoulos G Travlos A Wiemer C Fanciulli M Rittersma Z M		0，，：	1
16	Correlation of Charge Buildup and Stress-Induced Leakage Current in Cerium Oxide Films Grown on Ge (100) Substrates 显示文摘	Evangelou E K Rahman M S Dimoulas A	2009	IEEE Electron Device Letters2009，56，3：	1
17	Serial determinations of neutrophil CD64 expression for the diagnosis and monitoring of sepsis in critically ill patients显示文摘	Dimoula A pradier O Kassengera Z	2014	Clin Infect Dis2014，58，6：	1
18	The role of La surface chemistry in the passivation of Ge显示文摘	Dimoulas A Tsoutsou D Panayiotatos Y	2010	Appl Phys Lett2010，96，01：	1
19	Serial determinations of neutrophil CD64 expression for the diagnosis and monitoring of sepsis in critically m patients 显示文摘	Dimoula A Pradier 0 Kassengem Z	2014	Clin Infect Dis2014，58，6：	1
20	Appl显示文摘	Ioannou-Sougleridis V Vellianitis G Dimoulas A	2003	Phys2003，93，：	1

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