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35篇 您的检索式：作者名="Colinge J"

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	题名	作者	年代	出处	被引量
1	Pi-gate SO1 MOSFET 显示文摘	PARK J T COLINGE J P DIAZ C H	2001	IEEE Electron Dev Lett2001，22，8：	1
2	Global target profile of the kinase inhibitor bosutinib in primary chronic myeloid leukemia cells显示文摘	REMSING RIX LL RIX U COLINGE J	2009	Leukemia2009，23，3：	1
3	Subthreshold slope of thin-film SO1 MOSFET' s显示文摘	Colinge J P	1986	IEEE Electron Device Lett1986，7，6：	1
4	Field effect in large grain polyerystalline silicon 显示文摘	COLINGE J P MOREL H CHANTE J P	1983	IEEE Trans Elec Dev1983，30，3：	1
5	Nanowirc transistors without junctions 显示文摘	COLINGE J LEE C AFZALIAN A	2010	Nature Nanotechnology2010，1，5：	1
6	Junctionless nanowire transistor: complementary metal-oxide - semiconductor without junctions 显示文摘	COLINGE J P FERAIN I KRANTI A	2011	Sci Advan Mater2011，3，3：	1
7	Nanowire transistors without junctions 显示文摘	COLINGE J P LEE C W AFZALIAN A	2010	Nature Nanotechnology2010，5，：	1
8	Junctionless nanowirc transistor (jnt): properties and design guidelines 显示文摘	COLINGE J KRANTI A YAN R	2011	solid- state Electronics2011，6566，1：	1
9	Tem- perature dependence of threshold voltage in thin-film SOI MOSFETs 显示文摘	G-roeseneken G Colinge J P Maes H E	1990	IEEE Transactions on Electron Devices1990，11，8：	1
10	Reduced electric field in junctionless transistors 显示文摘	COLINGE J LEE C FERAIN I	2010	Applied Physics LEtters2010，96，7：	1
11	Nanowire transistors without junctions 显示文摘	COLINGE J P LEE C W AFZALIAN A	2010	Nature Nanotechnology2010，5，：	1
12	Mobility improvement in nanowire junctionless transistors by uniaxial strain 显示文摘	RASKIN J P COLINGE J P FERAIN I	2010	Appl Phys Lett2010，97，4：	1
13	Comparison of TiSi2, CoSi2 and NiSi for thin-film-silicon-on-insulator applications显示文摘	Chen J Colinge J-P Flandre D	1997	J Electrochem Soc1997，144，7：	1
14	Differential proteomics via probabilistic peptide identification scores显示文摘	Colinge J Chiappe D Lagache S	2005	Anal Chem2005，77，2：	1
15	Silicon-on-Insulator Gate-All-Around Device显示文摘	Colinge J P Gao M H	1990	IEDM1990，，：	1
16	Twin- MOSFET structure for suppression of kink and parasitic bipolar effects in SOI MOSFETs at room and liquid helium temperatures 显示文摘	GAO M COLINGE J P LAUWERS L	1992	Sol Sta Elec1992，35，4：	1
17	Multiple-gate SOI MOSFETs 显示文摘	COLINGE J P	2004	Solid -State Electronics2004，48，6：	1
18	On the high-temperature subthreshold slope of thin-film SOI MOSFETs显示文摘	Rudenko T Kilchytska V Colinge J P	2002	IEEE Electron Device Letters2002，23，3：	1
19	On the high-temperature subthreshold slope of thin-film SO1 MOSFETs 显示文摘	S T Rudenko V Kilchytska J P Colinge V Dessard D Flandre	2002	IEEE Electron Device Letters2002，23，3：	1
20	Twin-MOSFET structure for suppression of kink and parasitic bipolar effects in SOI MOSFETs at room and liquid helium temperatures 显示文摘	GAO M H COLINGE J P LAUWERS L	1992	Sol Sta Elec1992，35，4：	1

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