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97篇 您的检索式：期刊名="IEDM"

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	题名	作者	年代	出处	被引量
1	OUM- A180 nm nonvolatile memory cell element technology for stand- alone and embedded applications 显示文摘	Lai S Lowery T	2001	IEEE IEDM Technical Digest2001，5，：	1
2	Si complementary single-electron inverter显示文摘	Ono Y Takahashi Y Nagase M	1999	IEDM1999，15，：	1
3	A novel FET type ferroeleetric memories with excellent date retention characteristics 显示文摘	YOON S M ISHIWARA H	2000	IEDM Technical Digest2000，13，6：	1
4	Heat transfer and power capabilities of EHF helix TWTs显示文摘	R Harper M P Puri	1986	IEDM1986，，：	1
5	100W 18 - 40GHz Traveling Wave Tube显示文摘	B Braatz G Dohler G Groshart	1987	IEDM1987，，：	1
6	显示文摘	Aberg I Ni Chleirigh C Olubuyide O O	2004	IEDM Tech Dig2004，，：	1
7	The impact of the transient response of organic light emitting diodes on the de sign o{ active matrix OLED displays显示文摘	Dawson R M A Shen Z Furst D A	1998	IEDM Technology Digest1998，32，6：	1
8	Capacitance Modeling of Laterally Non-uniform MOS de-vices显示文摘	A C T Aarts R van der Hod J C J Paasschens	2004	IEDM2004，，：	1
9	High-performance infrared thermal imaging with monolithic silicon focal planes operating at room temperature 显示文摘	Wood R A	1993	IEEE on IEDM1993，，：	1
10	ALD HfO using heavy water (D2O) for improved MOSFET stability 显示文摘	TSENG H H RAMON ME HEBEBT L	2003	IEDM Tech Dig2003，78，12：	1
11	Control of phase and gain deviation in an octave bandwidth EHF TWT显示文摘	Puri M P	1986	IEDM IEEE1986，19，5：	1
12	显示文摘	Zorinsky E J Spratt D B Virkus R L	1986	J IEDM1986，86，：	1
13	Highly performant double gate MOS-FET realized with SON process显示文摘	Harrison S MA Dong-sheng	2003	IEDM TD2003，3，2：	1
14	Performance limits in visible and infrared imager sensors显示文摘	Kozlowski Luo J Tomasini A	1999	IEEE IEDM Digest1999，99，：	1
15	Self-aligned top and bottom metal double gate low temperature poly- Si TFT fabricated at 550℃ on non - alkali glass substrate by using DPSS CW laser lateral crystallization method 显示文摘	A Hara M Takei K Yoshino	2003	IEEE IEDM2003，03，：	1
16	Highly performant double gate MOS-FET realized with SON process显示文摘	Harrison S Pierreux D Terhorst H	2003	IEDM TD2003，2，6：	1
17	High voltage thin layer device ( Resurf device) 显示文摘	APPLES J A VAES H M J	1979	IEDM Tech Dig1979，，：	1
18	Integration of (Ba, Sr)TiO3 capacitor with platinum electrodes having SiO2 spacer 显示文摘	BYOUNG T L KI H L CHEOL S H	1997	IEDM1997，97，：	1
19	Thermally robust high-quality HfN-HfO2 gate stack for advanced CMOS devices显示文摘	Yu H Y Kang J F	2003	IEDM Tech Dig2003，，：	1
20	Thermal Propertiesand Power Capability of Helix Structures for M0illimeterWaves显示文摘	Sauseng O Manoly A E Hall A	1978	IEDM1978，24，：	1

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