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25篇 您的检索式：作者名="Colinge J P"

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	题名	作者	年代	出处	被引量
1	Pi-gate SO1 MOSFET 显示文摘	PARK J T COLINGE J P DIAZ C H	2001	IEEE Electron Dev Lett2001，22，8：	1
2	Subthreshold slope of thin-film SO1 MOSFET' s显示文摘	Colinge J P	1986	IEEE Electron Device Lett1986，7，6：	1
3	Field effect in large grain polyerystalline silicon 显示文摘	COLINGE J P MOREL H CHANTE J P	1983	IEEE Trans Elec Dev1983，30，3：	1
4	Junctionless nanowire transistor: complementary metal-oxide - semiconductor without junctions 显示文摘	COLINGE J P FERAIN I KRANTI A	2011	Sci Advan Mater2011，3，3：	1
5	Nanowire transistors without junctions 显示文摘	COLINGE J P LEE C W AFZALIAN A	2010	Nature Nanotechnology2010，5，：	1
6	Tem- perature dependence of threshold voltage in thin-film SOI MOSFETs 显示文摘	G-roeseneken G Colinge J P Maes H E	1990	IEEE Transactions on Electron Devices1990，11，8：	1
7	Nanowire transistors without junctions 显示文摘	COLINGE J P LEE C W AFZALIAN A	2010	Nature Nanotechnology2010，5，：	1
8	Mobility improvement in nanowire junctionless transistors by uniaxial strain 显示文摘	RASKIN J P COLINGE J P FERAIN I	2010	Appl Phys Lett2010，97，4：	1
9	Silicon-on-Insulator Gate-All-Around Device显示文摘	Colinge J P Gao M H	1990	IEDM1990，，：	1
10	Twin- MOSFET structure for suppression of kink and parasitic bipolar effects in SOI MOSFETs at room and liquid helium temperatures 显示文摘	GAO M COLINGE J P LAUWERS L	1992	Sol Sta Elec1992，35，4：	1
11	Multiple-gate SOI MOSFETs 显示文摘	COLINGE J P	2004	Solid -State Electronics2004，48，6：	1
12	On the high-temperature subthreshold slope of thin-film SOI MOSFETs显示文摘	Rudenko T Kilchytska V Colinge J P	2002	IEEE Electron Device Letters2002，23，3：	1
13	On the high-temperature subthreshold slope of thin-film SO1 MOSFETs 显示文摘	S T Rudenko V Kilchytska J P Colinge V Dessard D Flandre	2002	IEEE Electron Device Letters2002，23，3：	1
14	Twin-MOSFET structure for suppression of kink and parasitic bipolar effects in SOI MOSFETs at room and liquid helium temperatures 显示文摘	GAO M H COLINGE J P LAUWERS L	1992	Sol Sta Elec1992，35，4：	1
15	Study on titanium silicide process for thin-film SOI devices显示文摘	COLINGE J P	1997	Microelectron Eng1997，33，14：	1
16	Temperature effects on trigate SOI MOSFETs 显示文摘	Colinge J P Floyd L Quinn A J	2006	IEEE ELECTRON DEVICE LETTERS2006，27，3：	1
17	Reduced electric field in junctionless transistors 显示文摘	COLINGE J P LEE C W FERAIN I	2009	Appl Phys Lett2009，96，7：	1
18	Multiple-gate SOI MOSFETs:device design guidelines 显示文摘	Park J T Colinge J P	2002	IEEE Trans Elec Dev2002，49，12：	1
19	The development of CMOS/SIMOX technology显示文摘	Colinge J P	1995	Microelectronic Engineering1995，28，1：	1
20	Multigate tran- sistors as the future of elassical metal-oxide-semiconductor field-effect transistors 显示文摘	FERAIN I COLINGE C A COLINGE J P	2011	Nature2011，479，7373：	1

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