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37篇 您的检索式：作者名="B Hoex"

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	题名	作者	年代	出处	被引量
1	Surface pas-sivation of phosphorus-diffused n+-type emitters by plasmaassistedatomic-layer deposited Al2O3显示文摘	Hoex B Van de Sanden M C M Schmidt J	2012	physica status soli-di(RRL)-RapidResearchLetters2012，6，1：	1
2	Ultralow surface re-combination of c-Si substrates passivated by plasma-assist-ed atomic layer deposited Al2O3显示文摘	Hoex B Heil S B S Langereis E	2006	Applied Physics Letters2006，89，04：	1
3	On the Si surfacepassivation mechanism by the negative- charge- dielectricAl2O3显示文摘	Hoex B Gielis J J H Sanden M C M	2008	JournalofAppliedPhysics2008，104，11：	1
4	Silicon surface passivation by atomic layer deposited A1203显示文摘	Hoex B Schmidt J Pohl P	2008	Journal of Applied Physics2008，104，04：	1
5	Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited A12O3 显示文摘	Hoex B Heil S B S Langereis E	2006	Appl Phys Lett2006，89，4：	1
6	查看详情显示文摘	Hoex B Heil S B S Langereis E van de Sanden M C M Kessels W M M		0，，：	1
7	查看详情显示文摘	Hoex B Schmidt J Book R Altermatt P P van de Sanden M C M Kessels W M M		0，，：	1
8	查看详情显示文摘	Hoex B Schmidt J Pohl P van de Sanden M C M Kessels W M M		0，，：	1
9	Silicon surface passivation by atomic layer deposited AlzO3显示文摘	Hoex B Schmidt J Pohl P	2008	Journal of Applied Physics2008，104，：	1
10	查看详情显示文摘	Benick J Hoex B van de Sande M C M Kessels W M M Schultz O Glunz S W		0，，：	1
11	Ultralow surface recombination of c-Si substrates passivated by plasmaassisted atomic layer deposited Al2O3显示文摘	HOEX B HEIL S LANGEREIS E	2006	Applied Physics Letters2006，89，4：	1
12	High efficiency n type Si solar cells on A1203 passivated boron emitters显示文摘	Benick J Hoex B Van de Sanden M C M	2008	Applied Physics Letters2008，92，25：	1
13	High efficiency n-type Si solar cells on Al2O3-passivated boron emitters显示文摘	BENICK J HOEX B	2008	Applied Physics Letters2008，92，25：	1
14	Optimised antiref lection coatings using silicon nitride on textured silicon surfaces based on mea surements and multidimensional modelling显示文摘	Duttagupta S Ma F Hoex B	2012	Energy Procedia2012，15，：	1
15	High efficiency n-type Si solar cells on A1203-Passiva- ted boron Emitters 显示文摘	Benick J Hoex B Van de sanden M C M	2008	Applied Physics Letters2008，92，25：	1
16	Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 显示文摘	Hoex B Heil S B S Langereis E	2006	Applied Physics Letters2006，89，42：	1
17	Ultra low sur face recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited AI203显示文摘	B Hoex S B S Heil E Langereis	2006	Ap- plied Physics Letters2006，89，04：	1
18	High efficien- cy n-type Si solar cells on Al2O3-passivated boron emitter显示文摘	Benick J Hoex B van de Sanden M C M	2008	Appl Phys Lett2008，92，25：	1
19	Ultralow Surface Re- combination of c-Si Substrates Psivated by Plasmassisted Atomic Layer Deposited A1203 显示文摘	Hoex B Heil S B S Langereis E	2006	Applied Physics Letters2006，89，4：	1
20	Excellent Passivation of Highly Doped P-type Si Surfaces by the Negative-Charge- Dielectric A12 03 显示文摘	Hoex B Schmidt J Bock R	2007	Applied Physics Letters2007，91，11：	1

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