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25篇 您的检索式：期刊名="Microelectronie Engineering"

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	题名	作者	年代	出处	被引量
1	Thermal and elec- trical properties of PVD Ru(P) film as Cu diffusion barrier 显示文摘	Perng D C Hsu K C Tsai S W	2010	Microelectronie Engineering2010，87，3：	1
2	Reduction of pattern peeling in step-and-flash imprint lithography 显示文摘	TAKE1 S OGAWA T DESCHNER R	2014	Microelectronie Engineering2014，116，：	1
3	EBSD measurement of stain in GaAs due to oxidation of buried A1GaAs layers 显示文摘	Keller R R Roshko A	2004	Microelectronie Engineering2004，75，：	1
4	A study on the chemical mechanical polishing of oxide film using a zirconia (ZrO2)-mixed abrasive slurry (MAS)显示文摘	PARK S W SEO Y J LEE W S	2008	Microelectronie Engineering2008，85，：	1
5	Integrity of copper-hafnium, hafnium nitride and muhilayered amorphouslike hafnium nitride metallization under various thickness 显示文摘	OU K L	2006	Microelectronie Engineering2006，83，2：	1
6	High-sensitivity modulation-doped quantum dot infrared photodetectors显示文摘	Hirakawa K Lee S W Fujimoto S	2002	Microelectroni Engineering2002，63，13：	1
7	Three dimensional process simu-lation显示文摘	J Lorenz B Bzccus	1996	Microelectronie Engineering1996，34，1：	1
8	显示文摘	Laurila T Zeng K Kivilahti J K	2002	Microelectroni Engineering2002，60，12：	1
9	Apodised Bragg gratings in planar waveguides for add-drop filters 显示文摘	David C Wiesmann D Germann R	2001	Microelectronie Engineering2001，5758，：	1
10	Achievement of high pla narization efficiency in CMP of copper at a reduced down pres sure 显示文摘	PAND1JA S ROY D BABU S V	2009	Microelectronie Engineering2009，86，3：	1
11	Observation of Ni silicide formations and field emission properties of Ni silicide nanowires 显示文摘	Kim J D Lee E S Han C S et ol	2008	Microelectronie Engineering2008，85，8：	1
12	Reactive sputter deposition and properties of TaxN thin films显示文摘	Riekkinen T	2002	Microelectronie engineering2002，64，1：	1
13	Parasitic effect on silicon MEMS resonator model parameters显示文摘	TANAKA K KIHARA R SANCHEZ-AMORES A	2007	Microelectronie Engineering2007，84，58：	1
14	Status and prospects of UV-Nanoimprint technology显示文摘	BENDER M FUCHS A PLACHETKA U	2006	Microelectronie Engineering2006，83，：	1
15	Tantalum Carbide and Nitride Diffusion Barriers for Cu Metallisation 显示文摘	Laurila T Zeng K Kivilahti J K	2002	Microelectroni Engineering2002，60，12：	1
16	Simulation and fabrication of high voltage AIGaN/GaN based Schottky diodes with field plate edge termination 显示文摘	REMASHAN K HUANG W P CHYI J I	2007	Microelectronie Engineering2007，84，12：	1
17	Microcontacts with sub-30 μm pitch for 3D chip-on-chip integration显示文摘	Huebner H Penka S Barchmann B	2006	Microelectronie Engineering2006，83，：	1
18	Band offsets at the (100) GaSb/A1203 interface from internal electron photoemission study 显示文摘	Afanas' ev V V Chou H Y Stesmans A	2011	Microelectronie Engineering2011，88，7：	1
19	Structural and optical properties of BST thin films prepared by the sol-gel proccss显示文摘	ZHANG Tianjin GU Haoshuang LIU Jianghua	2003	Microelectronie Engineering2003，66，：	1
20	Fabrication of micro-lens arrays with moth-eye antireflective nanostruetures using thermal imprinting process显示文摘	OH S S CHOI C G KIM Y S	2010	Microelectronie Engineering2010，87，11：	1

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