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	题名	作者	年代	出处	被引量
1	Electron mobility in SOS films显示文摘	Sheng T	1978	IEEE Trans Electron Dev1978，8，：	2
2	Three-Dimensional Simulation of Multistage Depressed Collectors on Micro- Computers显示文摘	Kumar L Spadtke P Carter R G	1995	IEEE Trans Electron Dev1995，42，9：	1
3	A statistical reliability model for single-electron threshold logic 显示文摘	CHEN Chun-hong MAO Yan-jie	2008	IEEE Trans Electron Dev2008，55，6：	1
4	Theory and Design of Microwave-Tube Simulator Suite显示文摘	Li Bin Yang Zhonghai Li Jianqing	2009	IEEE Trans Electron Dev2009，56，5：	1
5	Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design 显示文摘	MAHAPATRA S VAISH V WASSHUBER C	2004	IEEE Trans Electron Dev2004，51，11：	1
6	Pentacene or- ganic thin-film transistors for circuit and display applications 显示文摘	Klauk H Gundlach D J Nichols J A	1999	IEEE Trans Electron Dev1999，46，6：	1
7	FinFET--a self-aligned double-gate MOSFET scalable to 20 nm 显示文摘	HISAMOTO D LEE W C KEDZIERSKI J	2000	IEEE Trans Electron Dev2000，47，12：	1
8	A monolit hic capacitive pressure sensor with pulse-period output显示文摘	SANDER C S KNUTTI J W MEINDL J D	1980	IEEE Trans Electron Dev1980，27，5：	1
9	A Unified Approach to RF and Microwave Noise Parameter Modeling in Bipolar Transistors显示文摘	NIU G CRESSLER JD ZHANG S	2001	IEEE Trans Electron Dev2001，48，11：	1
10	A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor devices 显示文摘	INOKAWA H FUJIWARA A TAKAHASHI Y	2003	IEEE Trans Electron Dev2003，50，2：	1
11	An ultra-miniature solid-state pressure sensor for a cardiovascular catheter显示文摘	CHAU H L WISE K D	1988	IEEE Trans Electron Dev1988，35，12：	1
12	Nano-reconfigurable cells with hybrid circuits of single-electron tran- sistors and MOSFETs 显示文摘	SUI Bing-cai FANG Liang CHI Ya-qing	2010	IEEE Trans Electron Dev2010，57，2：	1
13	Time de- pendent breakdown of ultrathin gate oxide显示文摘	Abdullah M Y Nariman H F Michael M	1999	IEEE Trans Electron Dev1999，47，7：	1
14	Frequency and Bias-dependent Modeling of Correlated base and Collector Current RF Noise in SiGe HBTs Using Quasi-static Equivalent Circuit显示文摘	XIA K NIU G SHERIDAN D	2006	IEEE Trans Electron Dev2006，53，03：	1
15	A compact analytical model for asymmetric single-electron tunneling transistors 显示文摘	INOKAWA H TAKAHASHI Y	2003	IEEE Trans Electron Dev2003，50，2：	1
16	Measurement and Interpretation of Stress in Aluminum-based Metallization as a Function of Thermal History显示文摘	P A Flinn D S Gardner W D Nix	1987	IEEE Trans Electron Dev1987，34，3：	1
17	Lead sodium niohate glass-ceramic dielectrics and internal electrode structure for high energy storage density ea- pacitors显示文摘	Luo J Du J Tang Q	2008	IEEE Trans on Electron Dev2008，55，：	1
18	Development of positive photoresists显示文摘	Neureuther W G	1984	IEEE Trans Electron Dev1984，31，12：	1
19	Increasing emission current from MIM cathode by using an Ir-Pt-Au multiplayer top electrode显示文摘	Kusunoki T Suzuki M	2000	IEEE Trans Electron Dev2000，47，8：	1
20	Semiconductor thickness effects in the double-gate SOI MOSFET 显示文摘	MAJKUSIAK B JANIK T WALCZAK J	1998	IEEE Trans Electron Dev1998，45，5：	1

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