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	题名	作者	年代	出处	被引量
1	Electron mobility in SOS films显示文摘	Sheng T	1978	IEEE Trans Electron Dev1978，8，：	2
2	Spintronic memristor through spin torque induced magnetization motion显示文摘	Wang X Chen Y Xi H	2009	IEEE Electron Dev Lett2009，30，：	1
3	Nonlithographic nano-wire arrays: fabrication, physics, and device applications 显示文摘	Tager A A Haruyama J	1996	IEEE T Electron Dev1996，43，：	1
4	Modeling of 10-nmscale ballistic MOSFET's显示文摘	Naveh Y Likharev K K	2000	IEEE Electron Dev Lett2000，21，：	1
5	Three-Dimensional Simulation of Multistage Depressed Collectors on Micro- Computers显示文摘	Kumar L Spadtke P Carter R G	1995	IEEE Trans Electron Dev1995，42，9：	1
6	A statistical reliability model for single-electron threshold logic 显示文摘	CHEN Chun-hong MAO Yan-jie	2008	IEEE Trans Electron Dev2008，55，6：	1
7	The effect of surface treatment on the electrical properties of metal contacts to boron-diamond homoepitaxial diamond films 显示文摘	Grot S A Gildenblat Gennady Sh Hatfield C W	1990	IEEE Electron Dev Lett1990，11，2：	1
8	Theory and Design of Microwave-Tube Simulator Suite显示文摘	Li Bin Yang Zhonghai Li Jianqing	2009	IEEE Trans Electron Dev2009，56，5：	1
9	Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design 显示文摘	MAHAPATRA S VAISH V WASSHUBER C	2004	IEEE Trans Electron Dev2004，51，11：	1
10	Pentacene or- ganic thin-film transistors for circuit and display applications 显示文摘	Klauk H Gundlach D J Nichols J A	1999	IEEE Trans Electron Dev1999，46，6：	1
11	FinFET--a self-aligned double-gate MOSFET scalable to 20 nm 显示文摘	HISAMOTO D LEE W C KEDZIERSKI J	2000	IEEE Trans Electron Dev2000，47，12：	1
12	A monolit hic capacitive pressure sensor with pulse-period output显示文摘	SANDER C S KNUTTI J W MEINDL J D	1980	IEEE Trans Electron Dev1980，27，5：	1
13	A Unified Approach to RF and Microwave Noise Parameter Modeling in Bipolar Transistors显示文摘	NIU G CRESSLER JD ZHANG S	2001	IEEE Trans Electron Dev2001，48，11：	1
14	A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor devices 显示文摘	INOKAWA H FUJIWARA A TAKAHASHI Y	2003	IEEE Trans Electron Dev2003，50，2：	1
15	An ultra-miniature solid-state pressure sensor for a cardiovascular catheter显示文摘	CHAU H L WISE K D	1988	IEEE Trans Electron Dev1988，35，12：	1
16	3C-silicon carbide nanowire FET:An experimental and theoretical approach显示文摘	Rogdakis K Lee S Y Bescond M	2008	IEEE T Electron Dev2008，55，8：	1
17	Nano-reconfigurable cells with hybrid circuits of single-electron tran- sistors and MOSFETs 显示文摘	SUI Bing-cai FANG Liang CHI Ya-qing	2010	IEEE Trans Electron Dev2010，57，2：	1
18	Pi-gate SO1 MOSFET 显示文摘	PARK J T COLINGE J P DIAZ C H	2001	IEEE Electron Dev Lett2001，22，8：	1
19	Time de- pendent breakdown of ultrathin gate oxide显示文摘	Abdullah M Y Nariman H F Michael M	1999	IEEE Trans Electron Dev1999，47，7：	1
20	Analytical methods for the extraction of solar-cell single-and double-diode model parameters from I-V characteristics显示文摘	D S H Chan J C H Phang	1987	IEEE T Electron Dev1987，34，2：	1

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