Spatial Potential Distribution around Trench Target during Plasma Immersion Ion Implantation

查看全文 作　　者：Xiubo Tian Chunbei Wei Shiqin Yang Paul K. Chu Ricky K.Y. [1,2,3,4,5,6]Fu 机构地区：[1]State Key Lab. of Welding Production Technology, School of Mater. Sci. & Eng., Harbin Institute of Technology, Harbin 15001, China;[2]Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong State Key Lab. of Welding Production Technology, School of Mater. Sci. & Eng., Harbin Institute of Technology, Harbin 15001, China;[3]Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong State Key Lab. of Welding Production Technology, School of Mater. Sci. & Eng., Harbin Institute of Technology, Harbin 15001, China;[4]Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong State Key Lab. of Welding Production Technology, School of Mater. Sci. & Eng., Harbin Institute of Technology, Harbin 15001, China;[5]Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong State Key Lab. of Welding Production Technology, School of Mater. Sci. & Eng., Harbin Institute of Technology, Harbin 15001, China;[6]Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong 出　　处：《Journal of Materials Science & Technology》索引2003年第19卷第z1期,共3页 基　　金：This work was partly supported by the National Natural Science Foundation of China (No.10345003) and Hong Kong Research Grants Council (RGC) Competitive Earmarked Research Grants(CERG) # CityU 1013/01E or 9040577 and CityU 1052/02E or 9040689. 摘　　要：Plasma ion implantation, an alternative to conventional beam-line ion implantation, is a sheath-acceleration ionbombardment technique and the initial sheath is crucial to the process efficacy and surface properties. The initialspatial potential distribution in the plasma sheath around a trench-shaped target is simulated using a two-dimensionalmodel in this work. The results demonstrate that the sheath structure depends very much on the trench width. Thepotential drop in the trench may be quite small and the sheath expands outward if the width is small. This leadsto a smaller incident ion dose into the sidewalls of the trench. In contrast, the initial potential distribution in thecentral region is quite similar to that without a trench if the trench width is larger than twice the ion-matrix sheaththickness for an infinite plane. Consequently, a higher ion dose into the sidewalls is possible. 关 键 词：PLASMA ion implantation, TRENCH target, Potential distribution