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		题名	作者	年代	出处	被引量
	1	An accurate solution of point kinetics equations of one-group delayed neutrons and an extraneous neutron source for step reactivity insertion显示文摘The continuous indication of the neutron density and its rate of change are important for the safe startup and operation of reactors. The best way to achieve this is to obtain analytical solutions of the neutron kinetics equations because none of the developed numerical methods can well satisfy the need for real-time or even super-time computation for the safe startup and operation of reactors in practice. In this paper, an accurate analytical solution of point kinetics equations with one-group delayed neutrons and an extraneous neutron source is proposed to calculate the change in neutron density, where the whole process from the subcritical stage to critical and supercritical stages is considered for step reactivity insertions. The accurate analytical solution can also be used as a benchmark of all numerical methods employed to solve stiff neutron kinetics equations.	LI HaoFeng SHANG XueLi CHEN WenZhen	2010	Chinese Science Bulletin2010，55，36：	3
	2	GaN薄膜表面形貌与AlN成核层生长参数的关系显示文摘采用金属有机物化学气相淀积技术生长了以AlN为成核层的GaN薄膜,研究了成核层生长时三甲基铝(TMAl)流量对最终GaN薄膜表面形貌的影响。研究结果表明,高质量的GaN薄膜只能在高TMAl流量下获得,采用充足的TMAl源才能形成满足需要的AlN成核点,这是生长高质量GaN薄膜的一个先决条件。	倪金玉李忠辉李亮董逊章咏梅许晓军孔月婵姜文海	2011	固体电子学研究与进展2011，31，1：	2

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