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| 1 | Compaction Performance of Biomimetic Press Roller to Soil显示文摘 | Jin Tong Qingzhu Zhang Li Guo Yuan Chang Yingjie Guo Fengwu Zhu Donghui Chen Xin Liu | 2015 | Journal of Bionic Engineering2015，12，1： | 3 |
| 2 | XPS Studies of Magnetic Multilayers显示文摘NiOx/N81Fe19 and Co/AlOx/Co magnetic multilayers were fabricated by reactive RF/DC magnetron sputtering on clean glass substrates and oxidized Si (100) substrates, respectively. The exchange biasing field (Hex) between NiOx, and Ni81Fe19 as a function of NiOx, oxidation states was studied by X-ray photoelectron spectroscopy (XPS). The oxidation states and the oxide thickness of Al layers in magnetic multilayer films consisting of Co/AlOx/Co were also analyzed. It is found that the Hex of NiOx/Ni81Fe19 films only depends on Ni2+ but not on Ni3+ or Ni. The bottom Co can be completely covered by depositing an Al layer thicker than 2.0 nm. The oxide layer was Al2O3, and its thickness was 1.15 nm. | Guanghua Yu, Hongchen Zhao, Jiao Teng, Chunlin Chai, Fengwu Zhu, Yang Xia, Shumin Chai Material Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China Microelectronics Center, Chinese Academy of Science, Beijin | 2001 | Journal of University of Science and Technology Beijing2001，8，3： | 2 |
| 3 | XPS Studies of Chemical States of NiO/NiFe Interface显示文摘Ta/NiO/NiFe/Ta multilayers were prepared by radio frequency reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached 9.6×103 A/m. The compositions and chemical states at the interface region of NiO/NiFe were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there are two thermodynamically favorable reactions at NiO/NiFe interface: NiO+Fe= Ni + FeO and 3NiO+2Fe =3 Ni+Fe203. The thickness of the chemical reaction area estimated by angle-resolved XPS was about 1-1.5 nm. These interface reaction products appear magnetic defects, and the exchange coupling field Hex and the coercivity Hc of NiO/NiFe are affected by these defects. | Guanghua Yu, Chunlin Chai, Fengwu Zhu, Jimei Xiao, Wuyan Lai 1)Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China 2)Institute of Physics. Chinese Academy of Sciences. Beijing, 100080, China | 2001 | Journal of University of Science and Technology Beijing2001，8，4： | 2 |
| 4 | Structure and magnetic properties of vacuum annealed FePt/Ag nano-multilayers显示文摘FePt/Ag)n nano-multilayers were deposited on MgO(100) single crystal with laser ablation and then sub-jected to annealing. FePt L10 grains with (001) texture and a large perpendicular magnetic anisotropy constant Ku of the order of 106 J/m3 were formed. A thick Ag layer is found to be favorable for improving the (111) preferential orientation and decreasing the dispersion of the easy axis for magnetiza-tion. The measurement of time decay of magnetization gave rise to an activation volume as small as 6×10-25 m3, showing the promising perspective of being the recording medium for future high density perpendicular recording. | YANG Tao, YU Guanghua, HWANG Pol & ZHU Fengwu Department of Materials Physics, University of Science and Technology Beijing, Beijing 100083, China | 2003 | Chinese Science Bulletin2003，48，3： | 2 |
| 5 | Magnetic property and interface structure of Ta/NiO/NiFe/Ta显示文摘Ta/NiO/NiFe/Ta multilayers, utilizing Ta as buffer layer, were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 9.6 ×103 A/m at a NiO film thickness of 50 nm. The composition and chemical states at interface region of Ta/NiO/Ta were studied by using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an 'intermixing layer' at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction 2Ta + 5NiO = 5Ni + Ta2O5. This interface reaction has a great effect on exchange coupling. The thickness of Ni+NiO estimated by XPS depth-profiles is about 8-10 nm. | YU Guanghua CHAI Chunlin ZHU Fengwu XIAO Jimei | 2001 | Chinese Science Bulletin2001，46，5： | 1 |
| 6 | Chemical states of the atoms in magnetic multilayers Ta/NiO_x/Ni_(81)Fe_(19)/Ta and Co/AlO_x/Co显示文摘Ta/NiOx/Ni81Fe19/Ta and Co/AlOx/Co multilay-ers were prepared by rf reactive and dc magnetron sputter-ing. The exchange coupling field (Hex) and the coercivity (Hc) of NiOx/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied. The composition and chemical states at the interface region of NiOx/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1 and the valence of nickel is +2. At this point, NiOx is anti-ferromagnetic NiO and the corresponding Hex is the largest. As the ratio of Ar/O2 deviates from 7, the Hex will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiOx/NiFe, while the Hc will increase due to the metallic Ni. Al layers in Co/AlOx/Co multilayers were also studied by angle-resolved XPS. Our finding is | YU Guanghua, ZHU Fengwu & CHAI ChunlinDepartment of Materials Physics, University of Science and Technology, Beijing 100083, China | 2002 | Chinese Science Bulletin2002，47，4： | 1 |
| 7 | Investigation on high magnetoresistance Ni_(0.81)Fe_(0.19) films grown on (Ni_(0.81)Fe_(0.19))_(1-x)Cr_(x) underlayers显示文摘We have fabricated Ni0.81Fe0.19 films with (Ni0.81Fe0.19)1-xCrx films as underlayers by dc magnetron sputtering, the results show that larger anisotropic magnetoresistance (△R/R) values of Ni0.81Fe0.19 films are observed using the underlayers with Cr concentration of ~36 at.% at an optimum underlayer thickness of ~4.4 nm, the maximum AMR value is 3.35%. The results of atomic force microscope (AFM) and X-ray diffraction (XRD) show that the △R/R enhancement is attributed to the formation of large average grain size and the strong(111) texture in the Ni0.81Fe0.19 films. | LI Haifeng MA Jidong YU Guanghua LONG Shibin ZHAO Hongchen ZHU Fengwu | 2003 | Chinese Science Bulletin2003，48，11： | 1 |
| 8 | Wettability and soil friction of the wollastonite fiber filled UHMWPE composites显示文摘 | Jin Tong Fengwu Zhu Yunhai Ma Zhiwu Han Luquan Ren | 2005 | Journal of Materials Science2005，，7： | 1 |
| 9 | Interface Reaction of NiO/NiFe and Its Influence on Magnetic Properties显示文摘 | Chai Chunlin Zhu Fengwu | 2001 | Appl Phys Lett2001，78，： | 1 |
| 10 | Preparation and magnetic properties of Co-P thin films显示文摘Magnetic Co-P thin films were prepared by electroless deposition. The experiment results show that the film thickness has a significant influence on the coercivity. While the film thickness varied from 300 nm to 5 μm,the coercivity dropped sharply from 45.36 to 22.28 kA/m. As the film thickness increased further,the coercivity varied slowly. When the thickness of the film was 300 nm,the deposited film could realize the coercivity as high as 45.36 kA/m,and the remanent magnetization as high as 800 kA/m .The Co-P films were deposited on the surface of magnetic drums of encoders,whose diameter was 40 mm,and then 512 magnetic poles were recorded,meaning that the magnetizing pitch was 0.245 mm. The testing results indicate that the output signals are perfect,the output waveforms are steady and the pulses account is integral. Compared with the γ-Fe2O3 coating,the Co-P thin film is suitable to be the magnetic recording media for the high resolution magnetic rotary encoder. | Haicheng Wang Zhongmei Du Lijin Wang Guanghua Yu Fengwu Zhu | 2008 | Journal of University of Science and Technology Beijing2008，15，5： | 1 |
| 11 | Perpendicular exchange bias of (Pt/Co)_n/FeMn multilayers显示文摘(Pt/Co)n/FeMn multilayers with perpendicular anisotropy (PA) were prepared by magnetron sputtering with Pt as the buffer layer and the capping layer. The dependence of perpendicular exchange bias (PEB), Hex, on the thickness of the FeMn antiferromagnet (AFM) layer is similar to that of in-plane exchange bias. The value of Hex for the (Pt/Co)3/FeMn multilayer reaches 22.3 kA/m. A thin Pt spacer was inserted between the Co/FeMn interface to enhance PEB. The PEB reaches the largest at 39.8 kA/m when the thickness of the Pt spacer is 0.4 nm. | Zhonghai Zhai Yang liu Jiao Teng Baohe Li Guanghua Yu Fengwu Zhu | 2007 | Journal of University of Science and Technology Beijing2007，14，6： | 0 |
| 12 | SiO_2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers显示文摘Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an 'intermixing layer' at the SiO2/Ta interface due to a thermody-namically favorable reaction: 15 SiO2+37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases. | YU Guanghua, MA Jidong, ZHU Fengwu & CHAI ChunlinDepartment of Materials Physics, University of Science and Technology, Beijing 100083, China Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China | 2002 | Chinese Science Bulletin2002，47，19： | 0 |
| 13 | Development Characteristics,Problems and Recommendations of Sweet Potato Industry in Fuyang City显示文摘The development of sweet potato industry in Fuyang City takes on following characteristics:increase in planting area of specialized households and professional cooperatives;increase in production input and yield;constant optimization of planting varieties;diversified planting modes.Sweet potato industry has made significant contribution to Fuyang City:(1)enriching types of agricultural products and promoting healthy diet;(2)driving development of agricultural product processing industry and increasing the employment rate of rural labor;(3)increasing financial revenue and rate of export-making foreign exchange of agricultural products;(4)increasing farmers'income and promoting new socialist countryside construction.In line with comparative advantages and existing problems of sweet potato industry in Fuyang City,it presents corresponding industrial development recommendations. | Zemin FAN Xinliang LIU Yuling ZHU Xiumei WANG Xiaolu JIANG Fengwu XING | 2013 | Asian Agricultural Research2013，5，12： | 0 |
| 14 | Microstructures and Magnetic Properties of Fe-Zr-B Based Nanocrystalline Alloys显示文摘We have studied the partitioning of B in Fe -14B and of Zr, B, Si, Cu and Au in FeZrB nanocrys-talline soft magnetic alloys by using atom probe field ion microscopy (APFIM) and high resolution electron microscopy (HREM) in atomic or nano-metric scales and’the effect of Si, Cu, andAuaddition on the magnetic properties. For Fe- 14B after annealing, a -Fe particles with diameters of about 50-100 nm formed and they contain high supersaturated B. For Fe - 7Zr-3B -1 Cu amorphous alloy, it was found that Cu atoms formed clusters prior to the crystallization reaction. During the crystallization, Cu-enriched clusters provided nucle-ation sites for a -Fe phase so that the nucleation density of a -Fe phase increased. For Fe - 7Zr -5B- 1Au amorphous alloys, Au clusters were observed during the nucleation and growth stage of primary a -Fe and a -Fe did not form at the sites of Au cluster. Hence Au does not enhance the nucleation density of a -Fe particles. For Fe-7Zr-4Si-2B alloys it was found that Si atoms are | Zhu Fengwu Zhang Yuan(Department of Materials Physics and Chemistry,University of Science and Technology Beijing, Beijing 100083) | 2002 | Science Foundation in China2002，10，1： | 0 |
| 15 | Magnetic properties and structure of very thin permalloy films显示文摘In order to study the magnetic properties and structure of very thin permalloy films, Ni81Fe19 films of 12 nm in thickness were prepared by different instruments at an ultrahigh base vacuum and a lower base vacuum. The anisotropic magnetoresistance coefficients (△R/R) of Ni81Fe19 (12 nm) films reached 1.6 % and 0.6 %, and the coercivities were 127 and 334 A/m, respectively. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to study the structure and surface chemical state. The experimental results show that the films prepared at the ultrahigh base vacuum have a smoother surface, a bigger grain size and a denser structure with fewer defects than those prepared at the lower base vacuum. | Guanghua Yu Haifeng Li Tao Yang Fengwu Zhu Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China | 2004 | Journal of University of Science and Technology Beijing2004，11，3： | 0 |
| 16 | The influence of the nonmagnetic metal spacer Bi,Ag and Cu on the properties of the multilayer films显示文摘Ta/NiFe/Bi(Ag, Cu)/FeMn/Ta and Ta/ NiFeⅠ /FeMn/Bi(Ag, Cu)/NiFeⅡ/Ta films were prepared by magnetic sputtering. The texture of films was examined by X-ray diffraction (XRD). The depend-ence of the Hex1 between NiFeⅠ/FeMn films and the Hex2 between FeMn/NiFeⅡ on the Bi, Ag and Cu thickness was studied in Ta/NiFeⅠ/FeMn/Bi(Ag, Cu)/ NiFeⅡ/Ta. The experimental results show that the He1 ranged from 130 to 140 Oe with an increase in the nonmagnetic metal spacer thickness. The Hex2 de-creased dramatically and became flat finally with the increase of the Bi, Ag and Cu thickness. XPS results show that Bi, Ag and Cu atoms do not stay entirely at the interface of FeMn/NiFeⅡ film; they are at least partly segregated to the surface of NiFe film. The more Bi, Ag and Cu atoms are deposited, the more they are segregated at the NiFe layer. | LI Minghua YU Guanghua ZHU Fengwu LAI Wuyan | 2006 | Chinese Science Bulletin2006，51，18： | 0 |
| 17 | Interface reactions in film materials显示文摘Interface reaction (IR) is a frequently observed phenomenon in the study of advanced thin film materials. It is very important to study the reaction conditions at which IR happens and then to suppress or make use of it, the necessary conditions, including both thermodynamical and dynamical conditions of IR were discussed in detail. IRs in various systems, including oxide/silicon,oxide/metal, metal/metal, metal/semiconductor and semiconductor/semiconductor, were reviewed. Methods to suppress and make use of IR were also introduced. | Fengwu Zhu, Zhonghai Thai, and Guanghua YuMaterials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China | 2003 | Journal of University of Science and Technology Beijing2003，10，5： | 0 |
| 18 | Effect of Cu surface segregation on the exchange coupling field of NiFe/FeMn bilayers显示文摘The NiFe/FeMn bilayers with different buffer layers (Ta or Ta/Cu) were prepared by magnetron sputtering. Results show that the exchange coupling field of NiFe/FeMn fllms with Ta buffer is higher than that of the films with Ta/ Cu buffer. We analysed the reasons by investigating the crystallographic texture, surface roughness and surface segregation of both fllms, respectively. We found that the decrease of the exchange coupling fields of NiFe/FeMn fllms with Ta/ Cu buffer layers was mainly caused by the Cu surface segregation on NiFe surface. | LI Minghua YU Guanghua ZHU Fengwu JIANG Hongwei LAI Wuyan | 2001 | Chinese Science Bulletin2001，46，22： | 0 |
| 19 | Ultrathin permalloy films显示文摘In view of the principle of glow-discharge, ul-trathin Ni81Fe19(12 nm) films were prepared at an ultrahigh base vacuum. The anisotropic magnetoresistance coefficient (△R/R%) for Ni81Fe19(12 nm) film reaches 1.2%, while the value of its coercivity is 127 A/m (i.e. 1.6 Oe). Ultrathin Ni81Fe19(12 nm) films were also prepared at a lower base vacuum. The comparison of the structure for two kinds of films shows that the films prepared at an ultrahigh base vacuum have a smoother surface, a denser structure with a few defects; the films prepared at a lower base vacuum have a rougher surface, a porouser structure with some defects. | Yu Guanghua Zhao Hongchen Zhu Fengwu | 2001 | Chinese Science Bulletin2001，46，20： | 0 |
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