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21篇 您的检索式：作者名="Zheleva T"

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	题名	作者	年代	出处	被引量
1	显示文摘	Thompson M P Auner G W Zheleva T S	2000	J Appl Phys2000，89，：	1
2	Sublimation growth and characterization of bulk aluminum nitride single crystals 显示文摘	Balkas C M Sitar Z Zheleva T	1997	J Cryst Growth1997，179，34：	1
3	Dislocation density reduction via lateral epitaxy in selectively grown GaN structures显示文摘	Zheleva T S Nam O Bremser M D	1997	Appl Phys Lett1997，71，：	1
4	Dislocation density reduetior via lateral expitaxy in selectively grow GaN structures显示文摘	ZHELEVA T S NAM O H BREMSER M D	1997	Appl Phys Lett1997，71，：	1
5	Dis- location density reduction via lateral epitaxy in selectively grown GaN structures 显示文摘	ZHELEVA T S NAM O BREMSER M D	1997	Applied Physics Letters1997，71，17：	1
6	显示文摘	Gruss K A Zheleva T Davis R F	1998	Surf Coat Technol1998，107，：	1
7	Disloca-tion Density Reduction Via Lateral Epitaxy in SelectivelyGrown GaN Structures 显示文摘	ZHELEVA T S NAM 0 H BREMSER M D	1997	Applied Physics Letters1997，71，17：	1
8	Structural and chemical comparison of graphite and BN/AIN caps used for annealing ion implanted SiC 显示文摘	JONES K A WOOD M C ZHELEVA T S	2008	Journal of Electronic Materi- als2008，37，6：	1
9	Effect of high-temperature anneals on 4H-Si C implanted with Al or Al and Si显示文摘	JONES K A SHAH P B ZHELEVA T S	2004	Journal of Applied Physics2004，96，10：	1
10	Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy 显示文摘	NAM O H BREMSER M D ZHELEVA T S	1997	Appl Phys Lett1997，71，18：	1
11	Transition layers at the SiO2/SiC interface显示文摘	Zheleva T	2008	Appl Phys Lett2008，93，02：	1
12	Graphite and BN/AIN Annealing Caps for Ion Implanted SiC显示文摘	Wond M C Jones K A Zheleva T S	2006	Material Science Forum2006，，：	1
13	Growth of Highly (0001)-oriented Aluminum Nitride Thin Films with Smooth Surfaces on Silicon Carbide by Gas-source Molecular Beam Epitaxy显示文摘	Jarrendahl K Smith S A Zheleva T	1998	Vacumm1998，49，：	1
14	显示文摘	O H Bremser M D Zheleva T S	1997	Appl Phys Lett1997，71，：	1
15	Solid-State Electron显示文摘	Derenge M A Jones K A Kirchner K W Ervin M H Zheleva T S Hullavarad S and Vispute R D	2004	48:1867-18722004，48，：	1
16	Solid-State Electron显示文摘	Ruppalt L B Stafford S Yuan D Jones K A Ervin M H Kirchner K W Zheleva T S Wood M C Geil B R Forsythe E Vispute R D and Venkatesan T	2003	47:253-2572003，47，：	1
17	Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H- SIC(0001) substrates显示文摘	Willian G Perry T Zheleva M D Bremser	1997	Journal of Electronics Material1997，36，：	1
18	Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy显示文摘	N am O H Bremser M D Zheleva T S	1997	Appl Phys Lett1997，71，18：	1
19	Transition layers at the SiO2/SiC interface 显示文摘	ZHELEVA T LELIS A DUSCHER G	2008	Appl Phys Lett2008，221，8：	1
20	Characterization of zirconium nitride coating deposited by catholic arc sputtering显示文摘	GRUSS K A ZHELEVA T DDVIS R F	1998	Surface and Coatings Technology1998，，：	1

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