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| 1 | Geochemical characteristics of natural gas from mud volcanoes in the southern Junggar Basin显示文摘A number of mud volcanoes exist in the southern Junggar Basin. To date few systematic studies on natural gas geochemistry of mud volcanoes have been conducted in China. In June 1991 and August 2010, the authors investigated the mud volcanoes in the southern Junggar Basin twice, and the mud volcanism weakened gradually as seen from the variations such as the decrease of gas pressure and output, the downthrow and dry up of the mud pool. The volcanic intensity was significantly weaker than that in Taiwan. The natural gas from the mud volcanoes in the southern Junggar Basin has similar geochemical characteristics, indicating the same source or origin. The main component of the mud volcano gas is alkane gas with contents of 91.15%-97.49%, and the gas is high-quality commercial gas since methane dominates in the alkane. The 13C1 values are 49.1‰--40.6‰, which are in accordance with the peak 13C1 frequency of mud volcano gas around the world, and the alkane gas displays positive carbon isotopic series, i.e., 13C1< 13C2< 13C3, suggesting typical thermogenic origin. The helium in the mud volcano gas is typically crust-derived due to the low R/Ra values of 0.011-0.054. The mud volcano gas is coal-derived since the 13C2 values are all greater than 28‰, and C1/C1-4 and 13C1 values are in accordance with those of natural gas derived from the Lower-Middle Jurassic coal-measures. Therefore, alkane gas from mud volcanoes in the southern Junggar Basin is mainly sourced from the Lower-Middle Jurassic coal-measures. | DAI JinXing WU XiaoQi NI YunYan WANG ZeCheng ZHAO ChangYi WANG ZhaoYun LIU GuiXia | 2012 | Science China Earth Sciences2012，55，3： | 13 |
| 2 | Switching from advancing to retreating subduction in the Neoproterozoic Tarim Craton, NW China: Implications for Rodinia breakup显示文摘Geodynamic drivers for the supercontinent cycle are generally attributed to either top-down(subduction-related)or bottom-up(mantle-related)processes.Compiled geochemical data and U-Pb ages and Hf isotopic signatures for magmatic and detrital zircons from the Tarim Craton reveal a distinct change in subduction style during the Neoproterozoic.The subduction cycle is recorded in increasing and decreasing intensity of subduction-related magmatic rocks and time-equivalent sedimentary successions,and converse trends ofεHf(t)values and corresponding changes in crustal incubation time.These trends are consistent with a switch from advancing to retreating subduction.The switch likely occurred at ca.760 Ma when zirconεHf(t)values increase and crustal incubation times decrease following a transitional shift between 800 Ma and 760 Ma.A switch at this time is consistent with Rodinia breakup and may have resulted in the late Neoproterozoic Tarim rift basin.The long-lived(ca.500 Ma)subduction recorded in the Tarim Craton suggests the predominance of a top-down process for Rodinia breakup on this part of its margin. | Guanghui Wu Shuai Yang Wei Liu R.Damian Nance Xin Chen Zecheng Wang Yang Xiao | 2021 | Geoscience Frontiers2021，12，1： | 1 |
| 3 | Wafer-Scale Synthesis of WS_(2) Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition显示文摘Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics.In this work,wafer-scale intrinsic n-type WS_(2)films and in situ Nb-doped p-type WS_(2)films were synthesized through atomic layer deposition(ALD)on 8-inchα-Al_(2)O_(3)/Si wafers,2-inch sapphire,and 1 cm^(2)GaN substrate pieces.The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing.WS_(2)n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes.X-ray photoelectron spectroscopy,Raman spectroscopy,and Hall measurements confirmed the effective substitutional doping with Nb.The on/off ratio and electron mobility of WS_(2)n-FET are as high as 105 and 6.85 cm^(2)V^(-1)s^(-1),respectively.In WS_(2)p-FET with 15-cycle Nb doping,the on/off ratio and hole mobility are 10 and 0.016 cm^(2)V^(-1)s^(-1),respectively.The p-n structure based on n-and p-type WS_(2)films was proved with a 10^(4) rectifying ratio.The realization of controllable in situ Nb-doped WS_(2)films paved a way for fabricating wafer-scale complementary WS_(2)FETs. | Hanjie Yang Yang Wang Xingli Zou Rongxu Bai Zecheng Wu Sheng Han Tao Chen Shen Hu Hao Zhu Lin Chen David W.Zhang Jack C.Lee Xionggang Lu Peng Zhou Qingqing Sun Edward T.Yu Deji Akinwande Li Ji | 2022 | Research2022，，1： | 0 |
| 4 | Wafer-Scale Synthesis of WS_(2)Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition显示文摘Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics.In this work,wafer-scale intrinsic n-type WS_(2)films and in situ Nb-doped p-type WS_(2)films were synthesized through atomic layer deposition(ALD)on 8-inchα-Al_(2)O_(3)/Si wafers,2-inch sapphire,and 1 cm^(2)GaN substrate pieces.The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing.WS_(2)n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes.X-ray photoelectron spectroscopy,Raman spectroscopy,and Hall measurements confirmed the effective substitutional doping with Nb.The on/off ratio and electron mobility of WS_(2)n-FET are as high as 105 and 6.85 cm^(2)V^(-1)s^(-1),respectively.In WS_(2)p-FET with 15-cycle Nb doping,the on/off ratio and hole mobility are 10 and 0.016 cm^(2)V^(-1)s^(-1),respectively.The p-n structure based on n-and p-type WS_(2)films was proved with a 10^(4)rectifying ratio.The realization of controllable in situ Nb-doped WS_(2)films paved a way for fabricating wafer-scale complementary WS_(2)FETs. | Hanjie Yang Yang Wang Xingli Zou Rongxu Bai Zecheng Wu Sheng Han Tao Chen Shen Hu Hao Zhu Lin Chen David W.Zhang Jack C.Lee Xionggang Lu Peng Zhou Qingqing Sun Edward T.Yu Deji Akinwande Li Ji | 2021 | Research2021，，1： | 0 |
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