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您的检索式：作者名="Edward T.Yu"
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| 1 | Wafer-Scale Synthesis of WS_(2) Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition显示文摘Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics.In this work,wafer-scale intrinsic n-type WS_(2)films and in situ Nb-doped p-type WS_(2)films were synthesized through atomic layer deposition(ALD)on 8-inchα-Al_(2)O_(3)/Si wafers,2-inch sapphire,and 1 cm^(2)GaN substrate pieces.The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing.WS_(2)n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes.X-ray photoelectron spectroscopy,Raman spectroscopy,and Hall measurements confirmed the effective substitutional doping with Nb.The on/off ratio and electron mobility of WS_(2)n-FET are as high as 105 and 6.85 cm^(2)V^(-1)s^(-1),respectively.In WS_(2)p-FET with 15-cycle Nb doping,the on/off ratio and hole mobility are 10 and 0.016 cm^(2)V^(-1)s^(-1),respectively.The p-n structure based on n-and p-type WS_(2)films was proved with a 10^(4) rectifying ratio.The realization of controllable in situ Nb-doped WS_(2)films paved a way for fabricating wafer-scale complementary WS_(2)FETs. | Hanjie Yang Yang Wang Xingli Zou Rongxu Bai Zecheng Wu Sheng Han Tao Chen Shen Hu Hao Zhu Lin Chen David W.Zhang Jack C.Lee Xionggang Lu Peng Zhou Qingqing Sun Edward T.Yu Deji Akinwande Li Ji | 2022 | Research2022，，1： | 0 |
| 2 | Wafer-Scale Synthesis of WS_(2)Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition显示文摘Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics.In this work,wafer-scale intrinsic n-type WS_(2)films and in situ Nb-doped p-type WS_(2)films were synthesized through atomic layer deposition(ALD)on 8-inchα-Al_(2)O_(3)/Si wafers,2-inch sapphire,and 1 cm^(2)GaN substrate pieces.The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing.WS_(2)n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes.X-ray photoelectron spectroscopy,Raman spectroscopy,and Hall measurements confirmed the effective substitutional doping with Nb.The on/off ratio and electron mobility of WS_(2)n-FET are as high as 105 and 6.85 cm^(2)V^(-1)s^(-1),respectively.In WS_(2)p-FET with 15-cycle Nb doping,the on/off ratio and hole mobility are 10 and 0.016 cm^(2)V^(-1)s^(-1),respectively.The p-n structure based on n-and p-type WS_(2)films was proved with a 10^(4)rectifying ratio.The realization of controllable in situ Nb-doped WS_(2)films paved a way for fabricating wafer-scale complementary WS_(2)FETs. | Hanjie Yang Yang Wang Xingli Zou Rongxu Bai Zecheng Wu Sheng Han Tao Chen Shen Hu Hao Zhu Lin Chen David W.Zhang Jack C.Lee Xionggang Lu Peng Zhou Qingqing Sun Edward T.Yu Deji Akinwande Li Ji | 2021 | Research2021，，1： | 0 |
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