3篇
您的检索式：作者名="Yangdan Lu"
|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | CC chemokine receptor 7 promotes triple-negative breast cancer growth and metastasis显示文摘 | Jiao Wu Lu Li Jianing Liu Yang Wang Zehua Wang Yangdan Wang Wenjing Liu Zhongmei Zhou Ceshi Chen Rong Liu Runxiang Yang | 2018 | Acta Biochimica et Biophysica Sinica2018，50，9： | 5 |
| 2 | Integrated System of Solar Cells with Hierarchical NiCo2O4 Battery-Supercapacitor Hybrid Devices for Self-Driving Light-Emitting Diodes显示文摘An integrated system has been provided with a-Si/H solar cells as energy conversion device,NiCo2O4 battery-supercapacitor hybrid(BSH)as energy storage device,and light emitting diodes(LEDs)as energy utilization device.By designing three-dimensional hierarchical NiCo2O4 arrays as faradic electrode,with capacitive electrode of active carbon(AC),BSHs were assembled with energy density of 16.6 Wh kg-1,power density of 7285 W kg-1,long-term stability with 100% retention after 15,000 cycles,and rather low self-discharge.The NiCo2O4//AC BSH was charged to 1.6 V in 1 s by solar cells and acted as reliable sources for powering LEDs.The integrated system is rational for operation,having an overall efficiency of 8.1% with storage efficiency of 74.24%.The integrated system demonstrates a stable solar power conversion,outstanding energy storage behavior,and reliable light emitting.Our study offers a precious strategy to design a self-driven integrated system for highly efficient energy utilization. | Yuliang Yuan Yangdan Lu BeiEr Jia Haichao Tang Lingxiang Chen YuJia Zeng Yang Hou Qinghua Zhang Qinggang He Lei Jiao Jianxing Leng Zhizhen Ye Jianguo Lu | 2019 | Nano-Micro Letters2019，11，3： | 5 |
| 3 | Homojunction structure amorphous oxide thin film transistors with ultra-high mobility显示文摘Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs. | Rongkai Lu Siqin Li Jianguo Lu Bojing Lu Ruqi Yang Yangdan Lu Wenyi Shao Yi Zhao Liping Zhu Fei Zhuge Zhizhen Ye | 2023 | Journal of Semiconductors2023，44，5： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员