| 8 | DESIGN AND FABRICATION OF Si/SiGe PMOSFETs显示文摘Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials,determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage. In the light of these principles,a SiGe PMOSFET is designed and fabricated successfully. Measurement indicates that the SiGe PMOSFET's (L=2μm) transconductance is 45 mS/mm (300K) and 92mS/mm (77K), while that is 33 mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure. | Yang Peifeng Li Jingchun Yu Qi Wang Xiangzhan Yang Mohua (Dept. of Microelectronic Science and Eng., UEST of China, Chengdu 610054)He Lin Li Kaicheng Tan KaizhouLiu Daoguang Zhang Jing Yi Qiang Fan Zerui(National Key Laboratory of Analog IC’s, Chongqing 400060) | 2002 | Journal of Electronics(China)2002，19，1： | 1 |
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