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| 1 | Fabrication of Meander and Spiral Type Micro Inductors显示文摘TO obtain microstructure of magnetic devices, the thin film inductors were fabricated by the process such as thin film manufacturing, photolithography and wet etching. The frequency characteristics of these devices are measured at high frequency range. When the inductor sizes of the spiral and the meander type are same, the inductance and the quality factor of the spiral type inductor are larger than those of the meander type inductor, but the driving frequency of the spiral type inductor is lower than that of the meander typejinductor. | T.S. Yoont, W.S. Cio and C. O.Kim (Division of Material Eng., Chungnam Nail. Unly., Taejon 305-764, Korea) H. w. hag (Dept. of Electronic Communication, Juseong College, Chungbuk 363-794, Korea) Y.H.Kim (Dept. of Electrical Eng., Pukyong Nail. Unly., Pusan, 608-737, Korea) | 2000 | Journal of Materials Science & Technology2000，16，2： | 3 |
| 2 | Strain-induced the dark current characteristics in InAs/GaSb type-Ⅱ superlattice for mid-wave detector显示文摘Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed during the growth process,which determines the performance of IR detectors.Therefore,great efforts have been made to properly control the strain effect and develop relevant analysis methods to evaluate the strain-induced dark current characteristics.In this work,we report the strain-induced dark current characteristics in InAs/GaSb T2SL MWIR photodetector.The overall strain of InAs/GaSb T2SL layer was analyzed by both high-resolution X-ray diffraction(HRXRD)and the dark current measured from the absorber layer at the elevated temperatures(≥110 K),where the major leakage current component is originated from the reduced minority carrier lifetime in the absorber layer.Our findings indicate that minority carrier lifetime increases as the tensile strain on the InAs/GaSb T2SL is more compensated by the compressive strain through‘InSb-like’interface,which reduces the dark current density of the device.Specifically,tensile strain compensated devices exhibited the dark current density of less than 2×10^-5 A/cm^2 at 120 K,which is more than one order of magnitude lower value compared to that of the device without tensile strain relaxation. | H.J.Lee S.Y.Ko Y.H.Kim J.Nah | 2020 | Journal of Semiconductors2020，41，6： | 2 |
| 3 | Heat transfer characteristics of flat plate finned-tube heat exchangers with large fin pitch显示文摘 | Y.H.Kim Y.Kim | | 0，，： | 1 |
| 4 | 评估2017年韩国浦项M_W5.4地震是否为诱发地震显示文摘2017年矩震级MW5.4的浦项地震,是韩国自1905年有仪器记录以来最具破坏性的地震,其发生在浦项地热发电厂之下。地质和地球物理数据显示,浦项地震是由增强型地热系统(EGS)向地下注水所诱发的,水被直接注入到地下一条应力接近临界状态的断裂带上。此次地震是迄今为止由EGS诱发的最大地震。 | K.-H.Kim J.-H.Ree Y.H.Kim S.Kim S.Y.Kang W.Seo 雷生学(译) 王伟(译) 蔡明刚(校) | 2019 | 世界地震译丛2019，50，6： | 0 |
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