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| 1 | Structure and magneto-electrical properties of Fe-C films prepared by magnetron sputtering显示文摘Fe-doped amorphous Fe x C 1 x granular films were prepared on n-Si(100) substrates by d.c.magnetron sputtering.The structural properties of Fe x C 1 x films were investigated by X-ray diffraction(XRD),atomic force microscope(AFM) and Raman spectroscopy.The results show that the iron and carbon of as-deposited films are in amorphous state,and the Fe x C 1 x films are diamond-like carbon(DLC) films.After doping iron into the DLC films,a smooth surface morphology of the Fe x C 1 x films has been obtained with the surface roughness Ra of about 0.231 nm for x=18at%.The Fe x C 1 x films have good soft magnetic properties with the coercivity of approximately 20 Oe.A high positive magnetoresistance(MR) up to 93% with x=1at% was observed in a Fe x C 1 x granular film at 300 K.The resistance characteristic of Fe-C films is changed at about 230 K and the positive MR effect can be understood by the p-n heterojunction theory. | MA Lei LIU ZhongWu ZENG DeChang YU HongYa ZHONG XiaPing ZHANG XiaoZhong | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，9： | 3 |
| 2 | Magnetic properties and magnetoresistance of Co_xC_(1-x) granular films prepared by magnetron sputtering显示文摘Amorphous CoxC1-x granular films were prepared on n-Si(100) substrate by dc magnetron sputtering.The effects of Co concentration,film thickness and annealing temperature on the magnetic properties and magnetoresistance(MR) were investigated.After annealing at 500°C for 0.5 hour,the Co(002) peak of the CoxC1-x(x>2.5 at.%) films was observed,but cracks appeared in the films.Saturation magnetization Ms increased steadily with the increase of Co concentration from 2.5 at.% to 50 at.% and also increased with annealing temperature from room temperature to 400°C.The coercivity of CoxC1-x films was less than 180 Oe.The as-deposited Co2.5C97.5 granular films with 80 nm thickness showed a highly positive MR,up to 15.5% at a magnetic field of 0.8 T,observed at T=300 K when the external magnetic field was perpendicular to the film surface.With increasing film thickness and annealing temperature,the value of MR was found to decrease gradually and changed from positive to negative.The MR effect of the CoxC1-x granular films can be explained by p-n heterojunction theory and interface scattering effect. | MA Lei LIU ZhongWu ZENG DeChang ZHONG XiaPing ZHANG XiaoZhong | 2011 | Science China(Physics,Mechanics & Astronomy)2011，54，7： | 1 |
| 3 | Peripheral nerve injury in patients exposed to n-hexane:an analysis of eight cases显示文摘Poisoning is often characterized by the acute onset,rapid progress,or specific manifestations of pathological symptoms,such as pulmonary fibrosis due to paraquat poisoning or high mortality arising from dinitrophenol intoxication (Jiang et al.,2016;Wang et al.,2017;Feng et al.,2018;Lu,2018;Xu and Lu,2019).Unlike general poisoning,however,the manifestation of n-hexane intoxication is subacute,and its clinical symptoms are dormant,and thus the provision of a timely and correct diagnosis is often difficult. | Xiaping ZHANG Yaling TONG Yuanqiang LU | 2021 | Journal of Zhejiang University-Science B(Biomedicine & Biotechnology)2021，22，3： | 1 |
| 4 | A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics显示文摘A 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor(UMOSFET)with semi-super-junction shiel-ded structure(SS-UMOS)is proposed and compared with conventional trench MOSFET(CT-UMOS)in this work.The advantage of the proposed structure is given by comprehensive study of the mechanism of the local semi-super-junction structure at the bottom of the trench MOSFET.In particular,the influence of the bias condition of the p-pillar at the bottom of the trench on the static and dynamic performances of the device is compared and revealed.The on-resistance of SS-UMOS with grounded(G)and ungrounded(NG)p-pillar is reduced by 52%(G)and 71%(NG)compared to CT-UMOS,respectively.Additionally,gate ox-ide in the GSS-UMOS is fully protected by the p-shield layer as well as semi-super-junction structure under the trench and p-base regions.Thus,a reduced electric-field of 2 MV/cm can be achieved at the corner of the p-shield layer.However,the quasi-intrinsic protective layer cannot be formed in NGSS-UMOS due to the charge storage effect in the floating p-pillar,resulting in a large electric field of 2.7 MV/cm at the gate oxide layer.Moreover,the total switching loss of GSS-UMOS is 1.95 mJ/cm2 and is reduced by 18%compared with CT-UMOS.On the contrary,the NGSS-UMOS has the slowest overall switching speed due to the weakened shielding effect of the p-pillar and the largest gate-to-drain capacitance among the three.The proposed GSS-UMOS plays an important role in high-voltage and high-frequency applications,and will provide a valuable idea for device design and circuit applications. | Xiaojie Wang Zhanwei Shen Guoliang Zhang Yuyang Miao Tiange Li Xiaogang Zhu Jiafa Cai Rongdun Hong Xiaping Chen Dingqu Lin Shaoxiong Wu Yuning Zhang Deyi Fu Zhengyun Wu Feng Zhang | 2022 | Journal of Semiconductors2022，43，12： | 0 |
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