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| 1 | Spreading kinetics of a Sn-30Bi-0.5Cu alloy on a Cu substrate显示文摘The reactive wetting kinetics of a Sn-30Bi-0.5Cu Pb-free solder alloy on a Cu substrate was investigated by the sessile drop method from 493 to 623 K.The triple line frontier,characterized by the drop base radius R was recorded dynamically with a high resolution CCD using different spreading processes in an Ar-H 2 flow.We found a good agreement with the De Gennes model for the relationship between ln(dR/dt) and lnR for the spreading processes at 493 and 523 K.However,a significant deviation from the De Gennes model was found for the spreading processes at 548 and 623 K.Our experimental results show a complicated temperature effect on the spreading kinetics.Intermetallics at the Sn-30Bi-0.5Cu/Cu interface were identified as Cu 6 Sn 5 adjacent to the solder and Cu 3 Sn adjacent to the Cu substrate.The intermetallic compounds effectively enhanced the triple line mobility because of reaction product formation at the diffusion frontier. | ZANG LiKun YUAN ZhangFu ZHAN YaPeng WANG ChenYu XU BingSheng | 2012 | Chinese Science Bulletin2012，57，6： | 1 |
| 2 | Road Pricing for Congestion Control with Unknown Demand and Cost Functions 显示文摘 | Hai Yang Wei Xu Bingsheng He | 2010 | Transportation Re- search Part C2010，18，： | 1 |
| 3 | Analysis of estrogens in environmental waters using polymer monolith in - polyether ether ketone tube solid - phase microextraction combined with high - performance liquid chromatography 显示文摘 | WEN Y ZHOU Bingsheng XU Ying | 2006 | J Chromatogr: A2006，1133，： | 1 |
| 4 | A logarithmic-quadratic proximal prediction-correction method for structured monotone variational inequalities显示文摘 | HE Bingsheng XU Yan YUAN Xiaoming | 2006 | Computational Optimization and Applications2006，35，： | 1 |
| 5 | Toxic effects of meothrin on the gill ultrastructure in grass carp,Ctenopharyngodon idellus显示文摘Toxiceffectsofmeothrinonthegillultrastructureingrasacarp,CtenopharyngodonidellusZhouBingsheng;ZhangYongyuan;XuYing(StateKeyLa... | Zhou Bingsheng Zhang Yongyuan Xu Ying( State Key Laboratory of Freshwater Ecology and Biotechnology, Institute of Hydrobiology. Chinese Academy of Sciences, Wuhan 410072. China) | 1994 | Journal of Environmental Sciences1994，6，1： | 1 |
| 6 | Preparation and photodetection performance of high crystalline quality and large size β-Ga_(2)O_(3)microwires显示文摘Ultrawide band gap semiconductors are promising solar-blind ultraviolet(UV)photodetector materials due to their suitable bandgap,strong absorption and high sensitivity.Here,β-Ga_(2)O_(3)microwires with high crystal quality and large size were grown by the chemical vapor deposition(CVD)method.The microwires reach up to 1 cm in length and were single crystalline with low defect density.Owing to its high crystal quality,a metal–semiconductor–metal photodetector fabricated from a Ga_(2)O_(3)microwire showed a responsivity of 1.2 A/W at 240 nm with an ultrahigh UV/visible rejection ratio(R_(peak)/R_(400 nm))of 5.8×10^(5),indicating that the device has excellent spectral selectivity.In addition,no obvious persistent photoconductivity was observed in the test.The rise and decay time constants of the device were 0.13 and 0.14 s,respectively.This work not only provides a growth method for high-quality Ga_(2)O_(3)microwires,but also demonstrates the excellent performance of Ga_(2)O_(3)microwires in solar-blind ultraviolet detection. | Yuefei Wang Yurui Han Chong Gao Bingsheng Li Jiangang Ma Haiyang Xu Aidong Shen Yichun Liu | 2023 | Journal of Semiconductors2023，44，6： | 0 |
| 7 | Visualization Location in Q235B Steel Structure by Using the Acoustic Emission Tomography显示文摘 | Yu Jiang Zhong Yang Feiyun Xu Bingsheng Xu Antolino Gallego | 2017 | Journal of Mechanics Engineering and Automation2017，7，1： | 0 |
| 8 | Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H-SiC显示文摘Color centers in silicon carbide(SiC)are promising candidates for quantum technologies.However,the richness of the polytype and defect configuration of SiC makes the accurate control of the types and position of defects in SiC still challenging.In this study,helium ion-implanted 4H-SiC was characterized by atomic force microscopy(AFM),confocal photoluminescence(PL),and confocal Raman spectroscopy at room temperature.PL signals of silicon vacancy were found and analyzed using 638-nm and 785-nm laser excitation by means of depth profiling and SWIFT mapping.Lattice defects(C-C bond)were detected by continuous laser excitation at 532 nm and 638 nm,respectively.PL/Raman depth profiling was helpful in revealing the three-dimensional distribution of produced defects.Differences in the depth profiling results and SRIM simulation results were explained by considering the depth resolution of the confocal measurement setup,helium bubbles,as well as swelling. | Ying Song Zongwei Xu Rongrong Li Hong Wang Yexin Fan Mathias Rommel Jiayu Liu Georgy V.Astakhov Gregor Hlawacek Bingsheng Li Jun Xu Fengzhou Fang | 2020 | Nanomanufacturing and Metrology2020，3，3： | 0 |
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