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| 1 | Factors Affecting the Growth of SiC Nano-whiskers显示文摘Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap.Semiconductor electronic devices and circuits made from SiC are presently developed for high-temperature,high-power,and high-radiation conditions,in which conventional semiconductors cannot be adequately performed.In this paper,SiH4 and C2H2 were used to synthesize SiC nano-whiskers.Metal Ni was the catalyst.SiC nanowhiskers were grown by vapor-liquid-solid mechanism.The effects of the H2 flow rate,growth temperature,catalyst thickness and growth pressure to grow SiC nano-whiskers were studied.3C-SiC thin film and nano-tips can be synthesized by controlling the growth conditions. | Y.F.Chen,X.Z.Liu and X.W.Deng State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China | 2010 | Journal of Materials Science & Technology2010，26，11： | 4 |
| 2 | Synergistic O^(2-)/Li^(+) Dual Ion Transportation at Atomic Scale显示文摘Te ion migration during electrochemical process is a fundamental scientifc issue for phase transition behavior and of technical importance for various functional devices,where cations or anions are active under electrical bias.Usually only one type of functional ion,O^(2-)or Li^(+),is activated due to their diferent migration energy barriers,cooperated by the valence change of other immobile ions in the host lattice matrix,e.g.,Co^(2+)/Co^(3+)and Mn^(3+)/Mn4+redox couples,owing to the charge neutralization.Here we select spinel Li4Ti5O12 as anode and construct an all-solid-state battery under a transmission electron microscope;a synergistic transportation of O^(2-)and Li^(+)driven by an electrical bias was directly observed at the atomic scale.A small amount of oxygen anions was extracted frstly as a result of its lowest vacancy formation energy under 2.2 V,leading to the vertical displacement of oxygen.Up to 2.7 V,an ordered phase with both Li-and O-defciency formed.Te Li^(+)and O^(2-)ions are simultaneously extracted out from the[LiO_(4)]tetrahedra due to the electroneutrality principle.Te migration paths of O and Li have been proposed and verifed by frst-principles calculations.Tese results reveal a brand new synergistic ion migration manner and may provide up-to-date insights on the transportation process of lithium ion conductors. | F.Q.Meng Q.H.Zhang A.Gao X.Z.Liu J.N.Zhang S.Y.Peng X.Lu L.Gu H.Li | 2019 | Research2019，，1： | 1 |
| 3 | 青藏高原东北缘岩石层结构:高原横向生长的机制显示文摘青藏高原东北缘及其周边亚洲板块(北部到阿拉善块体,东部到鄂尔多斯块体)岩石层结构的探测对了解青藏高原的抬升和横向生长具有重要的意义。本研究利用布设在青藏高原东北缘和周边区域的高密度地震台阵所记录的波形,计算S波和P波接收函数,研究岩石层结构。结果表明,鄂尔多斯块体和阿拉善块体下方的地幔岩石层中存在较强、相对稳定的负速度梯度,其深度范围在70~150km,这与典型稳定的大陆岩石层类似;相比之下,在青藏高原东北部下方地幔岩石层的速度梯度相对较弱和较模糊,这可能是由于地幔岩石层高温和存在部分熔融物质造成的;青藏高原与鄂尔多斯块体和阿拉善块体边界之间的岩石层结构变化剧烈,这两个块体作为刚性边界限制了青藏高原的横向变化。此外,在青藏高原东北角到银川地堑区域的地幔岩石层结构是相似的,这可能意味着从青藏高原东北角到鄂尔多斯块体和阿拉善块体之间的过渡间隔区内存在横向地幔流。这个过渡带的地壳结构为青藏高原横向生长提供了证据。特别是,在海原断裂和天景山断裂之间出现了地壳增厚和双地壳的证据,该区域可能是青藏高原在东北缘横向生长的前沿。 | X.Z.Shen M.Liu Y.Gao W.J.Wang Y.T.Shi M.J.An Y.S.Zhang X.Z.Liu 钱银苹(译) 李敏娟(译) 沈旭章(校) | 2018 | 世界地震译丛2018，49，2： | 0 |
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