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| 1 | Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire显示文摘We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes(UV-LEDs)emitting at 265 nm grown on stripe-patterned high-temperature annealed(HTA)epitaxially laterally overgrown(ELO)aluminium nitride(AIN)/sapphire templates.For this purpose,the structural and electro-optical properties of ultraviolet-c light-emitting diodes(UVC-LEDs)on as-grown and on HTA planar AlN/sapphire as well as ELO AlN/sapphire with and without HTA are investigated and compared.Cathodoluminescence measurements reveal dark spot densities of 3.5×10^9 cm^-2,1.1×10^9 cm^-2,1.4×10^9 cm^-2,and 0.9×10^9 cm^-2 in multiple quantum well samples on as-grown planar AIN/sapphire,HTA planar AlN/sapphire,ELO AlN/sapphire,and HTA ELO AlN/sapphire,respectively,and are consistent with the threading dislocation densities determined by transmission electron microscopy(TEM)and high-resolution X-ray diffraction rocking curve.The UVC-LED performance improves with the reduction of the threading dislocation densities(TDDs).The output powers(measured on-wafer in cw operation at 20 mA)of the UV-LEDs emitting at 265 nm were 0.03 mW(planar AlN/sapphire),0.8 mW(planar HTA AlN/sapphire),0.9 mW(ELO AlN/sapphire),and 1.1 mW(HTA ELO AlN/sapphire),respectively.Furthermore,Monte Carlo ray-tracing simulations showed a 15%increase in light-extraction efficiency due to the voids formed in the ELO process.These results demonstrate that HTA ELO AlN/sapphire templates provide a viable approach to increase the efficiency of UV-LEDs,improving both the internal quantum efficiency and the light-extraction efficiency. | NORMAN SUSILO EVIATHAR ZIFFER SYLVIA HAGEDORN LEONARDO CANCELLARA CARSTEN NETZEL NEYSHA LOBO PLOCH SHAOJUN WU JENS RASS SEBASTIAN WALDE LUCA SULMONI MARTIN GUTTMANN TIM WERNICKE MARTIN ALBRECHT MARKUS WEYERS MICHAEL KNEISSL | 2020 | Photonics Research2020，8，4： | 4 |
| 2 | Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers显示文摘The electrical and structural properties of V/Al-based n-contacts on n‐AlxGa1−xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are investigated.Ohmic n-contacts are obtained up to x=0.75 with a contact resistivity of 5.7×10^−4Ω·cm^2 whereas for higher Al mole fraction the IV characteristics are rectifying.Transmission electron microscopy reveals a thin crystalline AlN layer formed at the metal/semiconductor interface upon thermal annealing.Compositional analysis confirmed an Al enrichment at the interface.The interfacial nitride-based layer in n-contacts on n‐Al0.9Ga0.1N is partly amorphous and heavily contaminated by oxygen.The role and resulting limitations of Al in the metal stack for n-contacts on n-AlGaN with very high Al mole fraction are discussed.Finally,ultraviolet C(UVC)LEDs grown on n‐Al0.87Ga0.13N and emitting at 232 nm are fabricated with an operating voltage of 7.3 V and an emission power of 120μW at 20 mA in cw operation. | LUCA SULMONI FRANK MEHNKE ANNA MOGILATENKO MARTIN GUTTMANN TIM WERNICKE MICHAEL KNEISSL | 2020 | Photonics Research2020，8，8： | 4 |
| 3 | Abnormal High-Density Lipoprotein Induces Endothelial Dysfunction via Activation of Toll-Like Receptor-2显示文摘 | Thimoteus Speer Lucia Rohrer Przemyslaw Blyszczuk Rukshana Shroff Kira Kuschnerus Nicolle Kr?nkel Gabriela Kania Stephen Zewinger Alexander Akhmedov Yi Shi Tina Martin Damir Perisa Stephan Winnik Maja F. Müller Urban Sester Gabriel Wernicke Andreas Jung U | 2013 | Immunity2013，，： | 2 |
| 4 | Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs显示文摘This paper reports a comprehensive analysis of the origin of the electroluminescence(EL)peaks and of the thermal droop in UV-B AlGaN-based LEDs.By carrying out spectral measurements at several temperatures and currents,(i)we extract information on the physical origin of the various spectral bands,and(ii) we develop a novel closed-form model based on the Shockley–Read–Hall theory and on the ABC rate equation that is able to reproduce the experimental data on thermal droop caused by non-radiative recombination through deep levels.In the samples under test,the three EL bands are ascribed to the following processes:band-to-band recombination in the quantum wells(main EL peak),a parasitic intra-bandgap radiative transition in the quantum well barriers,and a second defect-related radiative process in the p-AlGaN superlattice. | CARLO DE SANTI MATTEO MENEGHINI DESIREE MONTI JOHANNES GLAAB MARTIN GUTTMANN JENS RASS SVEN EINFELDT FRANK MEHNKE JOHANNES ENSLIN TIM WERNICKE MICHAEL KNEISSL GAUDENZIO MENEGHESSO ENRICO ZANONI | 2017 | Photonics Research2017，5，2： | 2 |
| 5 | Parameter-optimized digital holographic microscope for high resolution living-cell analysis显示文摘 | Carl D Kemper B Wernicke G | 2004 | Appl Opt2004，43，6： | 1 |
| 6 | Modes of extensional tectonics显示文摘 | Wernicke B Burchfiel B C | 1982 | Journal of Structural Geology1982，4，1： | 1 |
| 7 | On the role of isostasy in the evolution of normal fault systems 显示文摘 | Wernicke B P Axen G J | 1988 | Geology1988，16，： | 1 |
| 8 | Low-angle normal faults in the basin and range provincc-nappe tectonics in an extending orogen显示文摘 | Wernicke B | 1981 | Nature1981，291，： | 1 |
| 9 | Localizing and segmenting text in images and videos 显示文摘 | Lieuhart R Wernicke A | 2002 | IEEE Transactions on Circuits and Systems for Video Technology2002，12，4： | 1 |
| 10 | Integrated electromicrobial conversion of CO2 to higher alcohols 显示文摘 | Li H Opgenorth PH Wernick DG Rogers S Wu TY Higashide W Malati P Huo YX Cho KM Liao JC | 2012 | Science2012，335，6076： | 1 |
| 11 | Drug-eluting stents and stent thrombosis:a cause for concern显示文摘 | Wernick MH Jeremias A Carrozza JP | 2006 | Coronartery Dis2006，17，8： | 1 |
| 12 | Complica- tion rates in patients with negative axillary nodes 10 years after local breast radiotherapy after either sentinel lymph node dissection or axillary clearance显示文摘 | Wernicke AG Shamis M Sidhu KK | 2013 | Am J Clin Oncol2013，36，1： | 1 |
| 13 | Dating topography of the Sierra Nevada, California, using apatite ( U-Th)/He ages显示文摘 | House M Wernicke B Farley K | 1998 | Nature1998，396，： | 1 |
| 14 | Low-angle normal fault in the Basin and Range Province:nappe tectonics in an extending orogen显示文摘 | Wernicke B | 1981 | Nature1981，291，： | 1 |
| 15 | Modes of extensional tectonics 显示文摘 | Wernicke B Burchfiel B C | 1982 | Journal of Structural Geology1982，16，： | 1 |
| 16 | Localizing and segmentation text in images and videos显示文摘 | WERNICKE A | 2000 | IEEE Transactions On Circuits and Systems For Video Technology2000，12，4： | 1 |
| 17 | C reactive protein increases whereas modified c reactive protein reduces atherosclerosis in apolipoprotein Eknockout mice 显示文摘 | Schwedler SB Amann K Wernicke K | 2005 | Circulation2005，112，11： | 1 |
| 18 | Mutator activity induced by microRNA-155 (miR-155) links inflammation and cancer显示文摘 | Tili E MichailleJ J Wernicke D | 2011 | Proc Natl Acad Sci USA2011，108，12： | 1 |
| 19 | Chronic ethanol exposure changes dopamine D2 receptor splicing during retinoic acid-induced differentiation of human SH–SY5Y cells显示文摘 | Wernicke C Hellmann J Finckh U Rommelspacher H | | 0，，04： | 1 |
| 20 | Cenozoic thermal evolution of the central Sierra Nevada, California,from(U-Th)/He thermochronometry 显示文摘 | House M A Wernicke B P Farley K A | 1997 | Earth and Planetary Science Letters1997，151，： | 1 |
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