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24篇 您的检索式：作者名="WALTEREIT P"

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	题名	作者	年代	出处	被引量
1	Nitride semiconductors free of electrostatic fields for efficient white lightemitting diodes显示文摘	WALTEREIT P BRANDT O TRAMPERT A	2000	Nature2000，406，：	1
2	Influence of AlN Nucleation Layers on Growth Mode and Strain Relief of GaN grown on 6H-SiC (0001) 显示文摘	Waltereit P Brandt 0 Tramper! A	1999	Applied Physics Letters1999，74，24：	1
3	Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes显示文摘	Waltereit P Brandt O Trampert A	2000	Nature2000，406，：	1
4	查看详情显示文摘	Poblenz C Waltereit P Rajan S Heikman S Mishra U K Speck J S		0，，：	1
5	Nitride Semiconduetors Free of Electrostatic Fields for Efficient White Light-emitting Diodes显示文摘	Waltereit P Brandt O Trampert A	2000	Letters to Nature2000，406，：	1
6	Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light Emitting Diodes显示文摘	Waltereit P Brandt O Trampert A	2000	Nature2000，406，：	1
7	Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-emitting Diodes显示文摘	Waltereit P Brandt O Trampert A	2000	Nature2000，406，：	1
8	Review of recent developments in growth of AlGaN/GaN high electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy显示文摘	CORRION A POBLENZ C WALTEREIT P	2006	IEICE Trans Elec2006，89，7：	1
9	Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-emitting Diodes 显示文摘	Waltereit P Brandt O Trampert A Grahn H T Menniger J Ramsteiner M Reiche M Ploog K H	2000	Nature2000，406，：	1
10	Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes显示文摘	WALTEREIT P BRANDT O TRAMPERT A	2000	Nature2000，406，6798：	1
11	显示文摘	Brandt O Waltereit P Ploog K H	2002	J Phys D: Appl Phys2002，35，：	1
12	Impact of GaN cap thickness on optical,electrical,and device properties in AlGaN/GaN high electron mobility transistor structures显示文摘	Waltereit P Muller S Bellman K		0，，02：	1
13	Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes显示文摘	Waltereit P Brandt O Trampert A	2000	Nature2000，406，6798：	1
14	Review of recent developments in growth of AlGaN/GaN high electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy显示文摘	CORRION A POBLENZ C WALTEREIT P	2006	IEICE Trans Elec2006，89，7：	1
15	M-plane GaN (1100) Grown on γ-LiAlO2(100): Nitride Semiconductors Free of Internal Electrostatic Fields 显示文摘	Waltereit P Brandt O Ramsteiner M Trampert A Grahn H T Menniger J Reiche M Ploog K H	2001	Journal of Crystal Growth2001，227，228：	1
16	Growth of M-GaN(1-100) on γ-LiAlO2(100)显示文摘	Waltereit P Brandt O Ramsteiner M	2000	Journal of Crystal Growth2000，218，：	1
17	Growth of M-plane GaN Films on γ-LiAlO2 (100) with High Phase Purity 显示文摘	Waltereit P Brandt O Ploog K H	2003	Journal of Vacuum Science and Technology B2003，21，4：	1
18	Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-emitting Diodes 显示文摘	Waltereit P Brandt O Trampert A	2000	Nature2000，406，：	1
19	Nitride semiconductors free of electrostatic fields for efficient white light emitting diodes 显示文摘	Waltereit P Brandt O	2000	Nature2000，406，6798：	1
20	Nitride semiconductors free of electrostatic fields for efficient white light- emitting diodes 显示文摘	Waltereit P Brandt O Trampert A	2002	Nature2002，406，6798：	1

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