维普中文期刊产品整合服务
20篇 您的检索式:作者名="W.Sheng"
    题名 作者 年代 出处 被引量
1查看详情显示文摘W.Sheng P.Hawrylak 0,,03:1
2Electron and hole effective masses in self-assembled quantum dots显示文摘A.Zhou W.Sheng 0,,02:1
3查看详情显示文摘S.Raymond S.Studenikin A.Sachrajda Z.Wasilewski S.J.Cheng W.Sheng P.Hawrylak A.Babinski M.Potemski G.Ortner and M.Bayer 0,,18:1
4Electronic properties of InAs/GaAs self-assembled quantum dots: beyond the effective mass approximation显示文摘W.Sheng J.-P.Leburton 0,,1:1
5查看详情显示文摘W.Sheng J.-P.Leburton 0,,:1
6查看详情显示文摘W.Sheng J.-P.Leburton 0,,23:1
7查看详情显示文摘W.Sheng J.P.Leburton 0,,15:1
8查看详情显示文摘W.Sheng 0,,17:1
9查看详情显示文摘W.Sheng 0,,04:1
10查看详情显示文摘W.Sheng S.J.Xu 0,,11:1
11查看详情显示文摘W.Sheng S.J.Cheng P.Hawrylak 0,,03:1
12查看详情显示文摘S.J.Cheng W.Sheng P.Hawrylak 0,,23:1
13查看详情显示文摘W.Sheng S.J.Xu P.Hawrylak 0,,:1
14查看详情显示文摘W.Sheng 0,,12:1
15查看详情显示文摘W.Sheng A.Babinski 0,,03:1
16查看详情显示文摘W.Sheng P.Hawrylak 0,,12:1
17查看详情显示文摘W.Sheng J.Wang 0,,07:1
18查看详情显示文摘W.Sheng 0,,13:1
19查看详情显示文摘W.Sheng 0,,11:1
20The enhanced negative thermal expansion in less-oxygen-vacancies copper pyrophosphate显示文摘For oxides,controlling the concentration of oxygen vacancy is a useful way to optimize their functional properties.However,when it comes to the field of negative thermal expansion(NTE),much less attention has been paid to the effect of oxygen vacancy on NTE,though oxide-typed NTE materials account for more than 40%of the total NTE materials.Here,we report that the linear coefficient of thermal expansion at 250–350 K of copper pyrophosphate(i.e.,Cu_(2)P_(2)O_(7))can be significantly improved from–13.88 to–36.60 ppm/K when the synthesis temperature is raised from 1073 to 1373 K.The combined study including X-ray absorption near edge structure,neutron powder diffraction,and X-ray diffraction has confirmed the selective vacancies in the O1 site for low-temperature synthesized samples,which suppress both the phase-transition and framework-structure driven NTE simultaneously.Our result proposes a new approach for optimizing the NTE effect of oxides.L.Lu Xie T.Fei Shi J.Chao Lin X.Kai Zhang X.Kang Zhong K.Ke Liu B.Ke Dong Cheng Yang X.Lian Wang T.Jiao Xiong W.Sheng Yan J.Ping Xu H.Can Chen Wen Yin Ming Li Peng Tong W.Hai Song Y.Ping Sun 2023Journal of Materials Science & Technology2023,,15:1
返回顶部 每页显示:
共1页 首页 上一页 第1页 下一页 末页 /1 跳转

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1 渝公网安备 50019002500403号 违法和不良信息举报中心

互联网出版许可证 新出网证(渝)字10号 全国400电话 - 免长途话费