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| 1 | High Ge content SGOI substrates obtained by the Ge condensation technique:A template for growth of strained epitaxial Ge显示文摘 | Souriau L Terzieva V Vandervorst W | 2008 | Thin Solid Films2008，517，1： | 1 |
| 2 | Successful preimplantation genetic diagnosis is related to the number of available cumulus-oocyte complexes显示文摘 | M Vandervorst I Liebaers K Sermon C | | 0，，11： | 1 |
| 3 | Blastocyst transfer after vitrification in a hemi-straw (HS) system 显示文摘 | Vandervorst M Vanderzwalmen P Standaart V | 2001 | Hum Reprod2001，，： | 1 |
| 4 | Successful preimplantation genetic diagnosis is related to the number of available cumulus-oocyte complexes显示文摘 | Vandervorst M Liebaers I Sermon K | 1998 | Hum Reprod1998，13，： | 1 |
| 5 | Travelling waves for fourth-order parabolic equations显示文摘 | Van den Berg J B Hulshof J Vandervorst R C | | 0，，： | 1 |
| 6 | Failure Mechanisms of Silicon-Based Atom-Probe Tips 显示文摘 | Koelling Vandervorst W | 2009 | Ultramicroscopy2009，，109： | 1 |
| 7 | Amodeling framework for supply chain simulation:opportunities for improved decision making显示文摘 | VANDER ZEED J VANDERVORST JGA J | 2005 | Decision Sciences2005，36，1： | 1 |
| 8 | 显示文摘 | Caymax M Degendt S Vandervorst W | 2002 | Int J high speed Electron Syst2002，12，： | 1 |
| 9 | Dopant profile extraction from spreading resistance measurements显示文摘 | Clarysse T Vandervorst W | 1992 | Journal of Vacuum Science & Technology B1992，10，1： | 1 |
| 10 | An imaging-based computational and experimental study of skull fracture:Finite element model development显示文摘 | Bandak F Vandervorst M Chilton W | 1995 | J Neurotrauma1995，12，4： | 1 |
| 11 | Voltage-controlled reverse filament growth boosts resistive switching memory显示文摘Nonvolatile 记忆设备基于切换的细丝的抵抗(RS ) areamong 造成未来设备和事情(IoT ) 的因特网的传感器的 frontrunners 时代。到在响应外部电的刺激的二个特殊抵抗状态之间的开关的许多 metal-insulator-metal 房间的能力被表明了。整个选择的年,房间基于金属离子的飘移,也就是传导性桥的存储器设备,与交换速度的毫微秒显示出大量应用程序,纳米可伸缩性,高密度、低的力量消费。不管多么低(sub-10-A ) 当前的操作,批评挑战被编程可变性并且由传导性的细丝的稳定性仍然随着时间的过去代表。由介绍反向的细丝生长(RFG ) 的概念,这里,我们设法与每上述的性质的重要改进在一个记忆房间内控制传导性的细丝的结构的重构。first-in-class 基于 Cu 的切换设备被表明与使我们能系统地触发 RFG 的奉献的栈,因此调节设备性质。与交换速度的毫微秒一起,我们与 10 2 完成了多达 10 个 6 周期的一个耐力读窗户,与突出随着时间的过去扰乱免疫和细丝的最佳的稳定性。由调节细丝形状,而且,多水平位操作的优秀控制被完成。因此,这台设备在记忆应用提供高灵活性。 | Attilio Belmonte Umberto Celano Zhe Chen Janaki Radhaskrishnan' Augusto Redolfi Sergiu Clima Olivier Richard Hugo Bender Gouri Sankar Kar Wilfried Vandervorst Ludovic Goux | 2018 | Nano Research2018，11，8： | 1 |
| 12 | Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane,silane and trisilane显示文摘 | VINCENT B LOO R VANDERVORST W | 2010 | Journal of Crystal Growth2010，312，19： | 1 |
| 13 | Study on thermal stability of poled non-linear optical polymers显示文摘A logarithmic expression is proposed to describe relaxation of the polar order in side chain polymers,together with a new way of plotting temperature dependent relaxation data.This results in a straight line extending even below the glass transition temperature in the case of poled nonlinear optics (NLO) side chain polymers.A simple procedure to determine the rotational diffusion constant Dr is given and Dr values of several polymer systems have been evaluated and compared with each other.It appears that,starting from the conventional and well known poled polymer system currently applied,a further lowering of Dr by about 3 orders of magnitude is necessary in order to reach an acceptable orientational stability or lifetime of poled polymers for practical applications.Attempts have been made to introduce electron push-pull substituents into high thermostable molecular frameworks and results of preliminary measurements are reported. | Mhlmann G.R. vanderVorst C.P.J.M. | 1996 | Chinese Journal of Chemistry1996，14，5： | 0 |
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