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26篇 您的检索式：作者名="Udrea F"

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	题名	作者	年代	出处	被引量
1	The 3D RESURF double-gate MOSFET:a revolutionary power device concept显示文摘	UDREA F POPESCU A MILNE W I	1998	Elec Lett1998，34，8：	1
2	Modelling of self-heating effect in thin SOI and partial SOI LDMOS power devices显示文摘	LIM H T UDREA F GARNER D M	1999	Sol Sta Elec1999，43，12：	1
3	SOI power devices显示文摘	UDREA F GARNER D SHENK	2000	Elec & Commoun Engineer J2000，12，1：	1
4	SOI power devices显示文摘	UDREA F GARNER D SHENG K	2000	Elec and Commun Engineer J2000，12，1：	1
5	Advanced SPICE modeling of large power IGBT modules 显示文摘	AZAR R UDREA F SILVA D	2004	IEEE Transactions on Industry Applications2004，40，3：	1
6	An analytic model for turn off in the silicon-on-insulator LIGBT显示文摘	F Udrea H T Lim	1999	Solid-State Electronics1999，43，10：	1
7	Tungsten-based SOI microhot-plates for smart gas sensors 显示文摘	Ali S Z Udrea F Milne W I	2008	Journal of Micro-electro-mechan-ical Systems2008，17，：	1
8	SOI Power Devices 显示文摘	UDREA F GARNER D SHENG K	2000	Electronics & Communication Engineering Journal2000，1，：	1
9	Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOl technology 显示文摘	UDREA F MILNE W POPESCU A	1998	Electronics Letters1998，3310，：	1
10	The softsuperjunction insulated gate bipolar transistor: a highspeed structure with enhanced electron injection 显示文摘	ANTONIOU M UDREA F BAUER F	2011	IEEE Transactions on Electron Devices2011，58，3：	1
11	Theorical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistors显示文摘	Udrea F Amaratuniga G A	1995	IEEE Transaction on Electron Devices1995，42，7：	1
12	Modelling of self- heating effect in thin SOl and Partial SOI LDMOS power devices显示文摘	Lira H T Udrea F Garner D M	1999	Solid - State Electronics1999，43，7：	1
13	Breakdown voltage for superjun-ction power devices with charge imbalance显示文摘	Napoli E Wang H Udrea F	2009	IEEE Trans on Electron Devices2009，56，12：	1
14	The integration of high-side and low-side LIGBT on partial silicon-on-insulator 显示文摘	GAMER D M UDREA F LIM H T	2000	Solid-State Electronics2000，44，6：	1
15	Modeling of self-heating effect in thin SOl and partial SOI LDMOS power devices显示文摘	LIM H T UDREA F GAMER D M	1999	Solid-State Electronics1999，，43：	1
16	Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology显示文摘	Milne W Popescu A	1997	Electron Lett1997，33，10：	1
17	An on-state analytical model for the TIGBT显示文摘	Udrea F Amaratunga G A J	1997	Solid-State Electronics1997，40，8：	1
18	A Numerical Study of the RESURF Effect in Bulk and SOI Power Deviees显示文摘	Popescu A Udrea F Milne W	1997	IEEE1997，，：	1
19	Lateral Insulated Gate Bipolar Transistor (L IGBT) Structure Based on Partial Isolation SOI Technology显示文摘	Milne W Popescu A	1997	Electron Lett1997，33，10：	1
20	SOI Power Devices显示文摘	Udrea F Garner D Shenk	2000	Electric & Community Engineer2000，12，1：	1

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