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23篇 您的检索式：作者名="Talyansky"

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	题名	作者	年代	出处	被引量
1	Advances in pulsed laser deposition of nitrides and their integration with oxides显示文摘	Vispute R Talyansky V Sharma R P	1998	Appl Surf Sci1998，，127179：	1
2	Heteroepitaxy of ZnO on GaN and its implicationsfor fabrication of hybrid optoelectronic devices 显示文摘	VISPUTE R D TALYANSKY V CHOOPUN S	1998	Appl Phys Lett1998，73，3：	1
3	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices显示文摘	VISPUTE R D TALYANSKY V CHOOPUN S	1998	Appl Phys Lett1998，73，3：	1
4	High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for Ⅲ~Ⅴnitrides显示文摘	TALYANSKY V TRAJANOVIC Z	1997	Appl Phys Lett1997，70，20：	1
5	Heteroepi- taxy of ZnO on GaN and its implications for fabrication of hybrid optoeleetronie devices 显示文摘	Vispute R D Talyansky V Choopun S	1998	Applied Physics Let- ters1998，73，3：	1
6	Heteroepitaxy of ZnO on GaN and Its Implications for Fabrication of Hybrid Opetoelectronic Devices显示文摘	Vispute R D Talyansky V Choopun S	1998	Appl Phys Lett1998，73，：	1
7	显示文摘	Vispute R D Talyansky V Choopun S	1998	Appl Phys Lett1998，73，：	1
8	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices显示文摘	Vispute R D Talyansky V Choopun S		0，，：	1
9	High-frequency single-electron transport and the quantized acoustoelectric effect 显示文摘	Cunningham J Talyanski V I Shihon J M	2000	Physica2000，280，：	1
10	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices显示文摘	Vispute R D Talyansky V Choopun S	1998	Appl Phys Lett1998，73，3：	1
11	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices显示文摘	Vispute R D Talyansky V Choopun S	1998	Appl phys Lett1998，73，3：	1
12	High quality crystalline ZnO buffer layers on sapphire (001)by pulsed laser deposition for Ⅲ-Ⅴ nitfides显示文摘	RD Vispute V Talyansky Z Trajanovic	1997	Appl Phys Lett1997，70，20：	1
13	Advances in pulsed laser deposition of nitrides and their integration with oxides 显示文摘	Vispute R D Talyansky V Sharma R P	1998	Applied Surface Science1998，，：	1
14	High quality crystalline ZnO buffet layers on sapphire {001}by pulsed laser deposition for Ⅲ-Ⅴ nitrides显示文摘	RD Vispute V Talyansky Z Trajanovic	1997	Appl Phys Lett1997，70，20：	1
15	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices显示文摘	Vispute R D Talyansky V Choopun S Sharma R P Venkatesan T He M Tang X Halpem J B Spencer M G Li Y X Salamanca-Riba L G Iliadis A A Jones K A		0，，03：	1
16	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoe- lectronic devices 显示文摘	Vispute R D Talyansky V Choopun S Sharma R P Venkatesan T He M Tang X Halpern J B Spencer M G Li Y X Salamanca-Riba L G Liiao- dos A A Jones K		Appl Phys Lett0，73，：	1
17	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices显示文摘	Vispute R D Talyansky V Choopun S	1998	Appl Phys Lett1998，73，：	1
18	显示文摘	Vispute R D Talyansky V Trajanovic Z	1997	Appl Phys Lett1997，70，20：	1
19	显示文摘	Vispute R D Talyansky V Trajanovic Z	1997	Appl Phys Lett1997，70，20：	1
20	High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for Ⅲ-Ⅳ nitrides显示文摘	VISPUTE R D TALYANSKY V TRAJANOVIC Z	1997	Appl Phys Lett1997，70，20：	1

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