| 1 | Enhancing strength and ductility of AlSi10Mg fabricated by selective laser melting by TiB_(2)nanoparticles显示文摘In the metallic components fabricated by the emerging selective laser melting(SLM)technology,most strategies used for strengthening the materials sacrifice the ductility,leading to the so-called strengthductility trade-off.In the present study,we report that the strength and ductility of materials can be enhanced simultaneously by introducing nanoparticles,which can break the trade-off of the metallic materials.In the case of in-situ nano-TiB_(2)decorated AlSi10Mg composites,the introduced nanoparticles lead to columnar-to-equiaxed transition,grain refinement and texture elimination.With increasing content of nanoparticles,the strength increases continually.Significantly,the ductility first increases and then decreases.Our results show that the ductility is controlled by the competition between the crack-induced catastrophic fracture and ductile fracture associated with dislocation activities.The first increase of ductility is mainly attributed to the suppression of crack-induced catastrophic fracture when TiB_(2)nanoparticles present.With the further increase of TiB_(2)nanoparticles,the subsequent decrease of ductility is mainly controlled by dislocation activities.Thus,the materials will exhibit the optimum strength and ductility combination in a certain range of TiB_(2)nanoparticles.This study clarifies the physical mechanism controlling ductility for nano-TiB_(2)decorated Al Si10Mg composites,which provides the insights for the design of structural materials. | Y.K.Xiao H.Chen Z.Y.Bian T.T.Sun H.Ding Q.Yang Y.Wu Q.Lian Z.Chen H.W.Wang | 2022 | Journal of Materials Science & Technology2022，，14： | 2 |
| 2 | SILICON MICRO-TRENCH ETCHING USING HIGH-DENSITY PLASMA ETCHER显示文摘Dry etching of silicon is an essential process step for the fabrication of Micro electromechancal system (MEMS). The AZ7220 positive photo-resist was used as the etching mask and silicon micro-trenches were fabricated with a multiplexed indu ctively coupled plasma (ICP) etcher. The influence of resist pattern profile, an d etch condition on sidewall roughness were investigated detail. The results sho w that the sidewall roughness of micro-trench depends on profiles of photo-resis t pattern, the initial interface between the resist bottom surface and silicon s urface heavily. The relationship between roughness and process optimization para meters are presented in the paper. The roughness of the sidewall has been decrea sed to a 20-50nm with this experiment. | T.T.Sun Z.G.Liu H.C.Yu M.B.Chen J.M.Miao | 2005 | Acta Metallurgica Sinica(English Letters)2005，18，3： | 0 |
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