| 1 | SILICON MICRO-TRENCH ETCHING USING HIGH-DENSITY PLASMA ETCHER显示文摘Dry etching of silicon is an essential process step for the fabrication of Micro electromechancal system (MEMS). The AZ7220 positive photo-resist was used as the etching mask and silicon micro-trenches were fabricated with a multiplexed indu ctively coupled plasma (ICP) etcher. The influence of resist pattern profile, an d etch condition on sidewall roughness were investigated detail. The results sho w that the sidewall roughness of micro-trench depends on profiles of photo-resis t pattern, the initial interface between the resist bottom surface and silicon s urface heavily. The relationship between roughness and process optimization para meters are presented in the paper. The roughness of the sidewall has been decrea sed to a 20-50nm with this experiment. | T.T.Sun Z.G.Liu H.C.Yu M.B.Chen J.M.Miao | 2005 | Acta Metallurgica Sinica(English Letters)2005，18，3： | 0 |
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