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353篇 您的检索式：作者名="Shur"

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	题名	作者	年代	出处	被引量
1	A shortchannel DC SPICE model for polysilicon thin-film transistors including temperature effects 显示文摘	Jacunski M D Shur M S Owusu A A	1999	IEEE Transactions on Electron Devices1999，46，6：	1
2	Neurocognitive basis of impaired empathy in schizophrenia显示文摘	Shamay-Tsoory SG Shur S Harari H	2007	Neuropsychology2007，21，4：	1
3	A new version of detached- eddy simulation,resistant to ambiguous grid densities 显示文摘	Spa\|art P R Deck S Shur M	2006	Theoretical and Computational Fluid Dynamics2006，20，：	1
4	Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN显示文摘	Shur M B.Gelmont Asif Khan M		0，，05：	1
5	A hybrid RANS-LES approach with delayed-DES and wall-modelled LES capabilities 显示文摘	Shur M L Spalart P R Strelets M K	2008	International Journal of Heat and Fluid Flow2008，29，6：	1
6	Avalanche breakdown and breakdown luminescence in pn-n GaN diodes显示文摘	A Osinsky M S Shur R Gaska	1998	Electronic Letters1998，34，：	1
7	A Short-Channel DC SPICE Model for Polysilicon Thin-Film Transistors Including Temperature Effects显示文摘	Jacunski M D Shur M S Owusu A A Ytterdal T Hack M Iniguez B	1999	Electron Devices Transactions on1999，46，6：	1
8	Cell surface 1,4-galactosyltransferase: expression and function-review 显示文摘	Cooke SV Shur BD	1994	Dev Growth Differ1994，36，2：	1
9	GaN-based electronic devices 显示文摘	Shur MS Gaska R Bykhovski A	1999	Solid-state Electronics1999，43，：	1
10	Is sperm galactosyltransferase a signaling subunit of a multimeric gamete receptor? 显示文摘	Shur BD	1998	Biochem Biophys Res Comm1998，250，3：	1
11	Elastic Strain Relaxation and Piezoeffect in GaN-AIN, GaN-A1GaN and GaN-InGaN Superlattices显示文摘	Bykhovski A D Gelmont B L Shur M S	1997	Journal of Applied Physics1997，81，9：	1
12	Temperature activated conductance in GaN/AIGaN heterostructure field effect transistors operating at temperature up to 300^oC 显示文摘	KHAN M A SHUR M S KUZNIA J N	1995	Appl Phys Lett1995，66，9：	1
13	Overexpressing cell surface beta 1,4-galactosyltransferase in PC12 cells increase neurite outgrowth on laminin显示文摘	Huang Q Shur BD	1995	J Cell Sci1995，108，：	1
14	Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300℃显示文摘	Khan M A Shur M S Kuznia J N	1995	Applied Physics Letters1995，66，27：	1
15	A new version of detached-eddy simulation, resistant to ambiguous grid densities显示文摘	SPALART P R DECK S SHUR M L	2006	Theor Comp Fluid Dyn2006，20，3：	1
16	Rheological properties of partially hyarolyzed cthylene-vinyl acetate copolvmers 显示文摘	Y J Shur B Ranby	1976	J Appl Polym Sci1976，20，：	1
17	Physical and numerical upgrades in the detached-eddy simulation of complex turbulent flows显示文摘	Travin A Shur M Strclets M	2004	Fluid Mechanics and Its Applications2004，65，5：	1
18	Cell surface galactosyltransferase: current issues显示文摘	Shur BD Evans S Lu Q etal	1998	J Glycocon1998，15，：	1
19	Temperature activated conductance in GaN/AlGaN heterostructrue field effect transistors operating at temperatures up to 300°C显示文摘	Khan M A Shur M S Kuznia J N	1995	Appl Phys Lett1995，，：	1
20	Solid-state lighting: toward superior illumination 显示文摘	SHUR M S ZUKAUSKAS R	2005	Proceedings of the IEEE2005，93，：	1

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