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1篇 您的检索式：作者名="Shichuang Sun"

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		题名	作者	年代	出处	被引量
	1	Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability显示文摘We proposed a novel Al Ga N/Ga N enhancement-mode(E-mode) high electron mobility transistor(HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs(from 2.83 MV/cm decreased to 0.83 MV/cm). Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field.	Weiyi Li Zhili Zhang Kai Fu Guohao Yu Xiaodong Zhang Shichuang Sun Liang Song Ronghui Hao Yaming Fan Yong Cai Baoshun Zhang	2017	Journal of Semiconductors2017，38，7：	0

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