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| 1 | Photolumincscence from wurtzite CaN under hydrostatic pressure显示文摘 | SANGSIG K | 1995 | Applied Physics Letters1995，67，3： | 1 |
| 2 | Wear and dynamic properties of piezoelectric ultrasonic motor with frictional materials coated stator显示文摘 | Hyun Phill Ko Sangsig Kim Jin Sang Kim | 2005 | Materials Chemistry and Physics2005，90，： | 1 |
| 3 | A novel tiny ultrasonic linear motor using the radial mode of a bimorph 显示文摘 | Hyun-Phill Ko Sangsig Kim Sergjus N Borodinas | 2006 | Sensors and Actuators A: physical2006，，125： | 1 |
| 4 | Exciton photoluminescence in strained and unstrained ZnSe under hydrostatic pressure显示文摘 | Judah A Tuehman Sangsig Kim Zhifeng Sui | 1992 | Phys Rev B1992，，13： | 1 |
| 5 | Sub 5 nm magnetite nanoparticles: Synthesis, microstructure, and magnetic properties显示文摘 | Jun-Hua Wu Seung Pil Ko Hong-Ling Liu Sangsig Kim Jae-Seon Ju Young Keun Kim | 2006 | Materials Letters2006，，14： | 1 |
| 6 | Wear and dynamic properties of piezoelectric ultrasonic motor with frictional materials coated stator显示文摘 | KO Hyun-Phill KIM Sangsig KIM Jin- Sang | 2005 | Materials Chemistry and Physics2005，90，： | 1 |
| 7 | Wear and dynamic properties of piezoelectric ultrasonic motor with frictional materials coated stator显示文摘 | Hyun-Phill Ko Sangsig Kim Jin-Sang Kim Hyun-Jai Kim Seok-Jin Yoon | 2004 | Materials Chemistry and Physics2004，，2： | 1 |
| 8 | Increased seizure susceptibility in mice lacking metabotropic glutamate receptor 7 显示文摘 | Sangsig G Bushell T J Clarke V R | 2001 | J Neurosci2001，21，22： | 1 |
| 9 | 显示文摘 | Cho Mi Yeon Cho Kyoungah Kim Sangsig | 2013 | Journal of Lu- minescence2013，134，2： | 1 |
| 10 | Simulation of a new lateral trench IGBT employing effective p + diverter for improving latch-up characteristics 显示文摘 | GOO KANG SANGSIG KIN | 2001 | Microelectronics Journal2001，32，5： | 1 |
| 11 | NOR logic function of a bendable combination of tunneling field-effect transistors with silicon nanowire channels显示文摘在这研究,我们与不均匀地做的 p +-i-n+ 硅 nanowire (SiNW ) 建议通道地效果晶体管(TFET ) 的新奇联合可弯曲的底层上的隧道。在平行的二 n 隧道 SiNW-TFETs (NWTFET ) 和在系列的二 p 隧道 NWTFET 的联合是操作一二输入也不逻辑门。有 n 隧道和 p 隧道的部件 NWTFET 展出 69 和 53 mV 的次于最低限度的秋千(SS ) | Yoonjoong Kim Youngin Jeon Minsuk Kim Sangsig Kim | 2016 | Nano Research2016，9，2： | 1 |
| 12 | Photoluminescence from Wurtzite GaN under Hydrostatic Pressure显示文摘 | Sangsig K Herman I P Tuchman J A | 1995 | Applied Physics Letters1995，67，3： | 1 |
| 13 | A novel tiny ultrasonic linear motor using the radial mode of a bimorph显示文摘 | Ko Hyun-Phill Kim Sangsig Borodinas Sergjus N | 2006 | Sensors and Actuators A: physical2006，125，： | 1 |
| 14 | Wear and dynamic properties of piezoelectric ultrasonic motor with frictional materials coated stator显示文摘 | HYUN-PHILL K SANGSIG K JIN-SANG K | 2005 | Materials Chemistry and Physics2005，90，23： | 1 |
| 15 | Simulation of aNew Lateral Trench IGBT Employing Effective p+Diverter for Im-proving Latch-up Characteristics显示文摘 | KANG Ey Goo KIM Sangsig SUNG Man Young | 2001 | Microelectronics JournalDenver2001，32，29： | 1 |
| 16 | Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics显示文摘在这份报纸,我们证明硅 nanowire (SiNW ) 的低力量的功能在可弯曲的塑料上装配了 inverters。我们的可弯曲的 inverters 能够在与切换象 0.8 V 一样低的供应电压操作(或待机) 0.2 nW 的电源消费(或 6.6 pW ) 。有 18 的电压获得的低力量的转换操作对有选择地变瘦的部件晶体管的近理想的特征可归因 SiNW 隧道和展览 0.40 和 0.39 V 的低、对称的阀值电压和 81 和 65 mV/dec 的低次于最低限度的秋千价值。而且,机械 bendability 表明转换操作有好、稳定的疲劳性质。 | Youngin Jeon Myeongwon Lee Minsuk Kim Yoonjoong Kim Sangsig Kim | 2016 | Nano Research2016，9，5： | 0 |
| 17 | Silicon nanowire ratioed inverters on bendable substrates显示文摘 | Jeongje Moon Yoonjoong Kim Doohyeok Lim Kyeungmin Im Sangsig Kim | 2018 | Nano Research2018，11，5： | 0 |
| 18 | Silicon nanowire CMOS NOR logic gates featuring onevolt operation on bendable substrates显示文摘 | Jeongje Moon Yoonjoong Kim Doohyeok Lim Sangsig Kim | 2018 | Nano Research2018，11，5： | 0 |
| 19 | Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates显示文摘在这份报纸,我们建议硅 nanowire (SiNW ) 的新奇构造否定 -- 并且(反及) 可弯曲的塑料底层上的逻辑门并且描述他们的电的特征。有 SiNW 隧道的反及逻辑门能够与象 0.8 V 一样低的供应电压操作,与分别地切换和约 1.1 和 0.068 nW 的待机电源消费。每只 SiNW 晶体管的优异电的特征包括陡峭的次于最低限度的斜坡,高我 开/关 比率,和对称的阀值电压,是启用逻辑门的 nanowatt 范围电源操作的主要因素。而且,逻辑门的机械 bendability 显示他们有好、稳定的疲劳性质。 | Junggwon Yun Myeongwon Lee Youngin Jeon Minsuk Kim Yoonjoong Kim Doohyeok Lim Sangsig Kim | 2016 | Nano Research2016，9，12： | 0 |
| 20 | Polarity control of carrier injection for nanowire feedback field-effect transistors显示文摘We present polarity control of the carrier injection for a feedback field-effect transistor(FBFET)with a selectively thinned p^+-i-n^+Si nanowire(SiNW)channel and two separate gates.The SiNW FBFET can be reconfigured in the p-or n-channel operation modes via simple control of electric signals.The two separate gates induce potential barriers in the SiNW channel for selective control of the carrier injection.In contrast to previously reported rec on figurable tran sistors,our tran sistor features symmetry of the electrical characteristics for the p-and n-cha nnel operation modes.Positive-feedback operation of the SiNW FBFET provides superior switching characteristics for the p-and n-type 8nfigurations,including the on/off ratios(~10^5)and subthreshold swings(1.36-1.78 mV/dec).This novel tran sistor is a promising can didate for reconfigurable electro nics. | Doohyeok Lim Sangsig Kim | 2019 | Nano Research2019，12，10： | 0 |
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