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| 1 | Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions显示文摘The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence are examined,and related geometrical construction and critical charge are quantified.The MUlti-Functional Package for SEU Analysis(MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction,critical charge,and SEU cross section calculation.The proposed MUFPSA has yielded a good agreement with MRED.Specifically,the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition.In addition,the analytical method of radial ionization profile provides a good complementary interpretation. | GENG Chao LIU Jie ZHANG ZhanGang HOU MingDong SUN YouMei XI Kai GU Song DUAN JingLai YAO HuiJun MO Dan LUO Jie | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，6： | 6 |
| 2 | A study of the suppression of the high-temperature helium embrittlement in an oxide-particle dispersion strengthened alloy显示文摘In this paper,an investigation on the micro-structure of an Fe-base oxide-dispersion-strengthened(ODS) alloy irradiated with high-energy 20Ne ions to different doses at a temperature around 0.5Tm(Tm is the melting point of the alloy) is presented.Investigation with the transmission electron microscopy found that the accelerated growth of voids at grain-boundaries,which is usually a concern in conven-tional Fe-base alloys under conditions of inert-gas implantation,was not observed in the ODS alloy irradiated even to the highest dose(12000 at.ppm Ne).The reason is ascribed to the enhanced recom-bination of point defects and strong trapping of Ne atoms at the interfaces of the nano-scale oxide par-ticles in grains.The study showed that ODS alloys have good resistance to the high-temperature in-ter-granular embrittlement due to inert-gas accumulation,exhibiting prominence of application in harsh situations of considerable helium production at elevated temperatures like in a fusion reactor. | ZHANG ChongHong JANG J. S. YANG YiTao SONG Yin SUN YouMei CHO H. D. JIN YunFan | 2008 | Chinese Science Bulletin2008，53，21： | 1 |
| 3 | Correlation Between the Structure Modification and Conductivity of 3 MeV Si Ion-irradiated Polyimide 显示文摘 | SUN Youmei ZHU Zhiyong LI Changlin | 2002 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms2002，191，14： | 1 |
| 4 | Design and Verification of Universal Evaluation System for Single Event Effect Sensitivity Measurement in Very-Large-Scale Integrated Circuits显示文摘Field-programmable-gate-array(FPGA)has been wildly used in many space missions due to its high performance and reconfiguration capability[1].With the feature size continuing scaling down. | Gao Shuai Cai Chang Liu Jie Sun Youmei | 2019 | IMP & HIRFL Annual Report2019，，1： | 1 |
| 5 | InSb Nanowiers Prepared in Ion-track Template显示文摘 | Yao Huijun Liu Jie Mo Dan Cui Junpeng Duan Jinglai Hou Mingdong Sun Youmei Chen Yanfeng Xu Zhihao | 2006 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2006，，1： | 0 |
| 6 | Device-orientation Effects on Multiple-cell Upset Response显示文摘 | Zhang Zhangang Liu Jie Hou Mingdong Sun Youmei Su Hong Duan Jinglai Mo Dan Yao Huijun Luo Jie Geng Chao Gu Song | 2011 | IMP & HIRFL Annual Report2011，，1： | 0 |
| 7 | Computational Simulation of Single Event Upset by Normal and Omnidirectional Incidence显示文摘 | Geng Chao Liu Jie Hou Mingdong Sun Youmei Zhang Zhangang Duan Jinglai Yao Huijun Mo Dan Luo Jie Xi Kai Gu Song | 2011 | IMP & HIRFL Annual Report2011，，1： | 0 |
| 8 | Impact of Radial Ionization Profile on Single Event Upset Occurrence显示文摘 | Geng Chao Liu Jie Hou Mingdong Sun Youmei Zhang Zhangang Duan Jinglai Yao Huijun Mo Dan Luo Jie Xi Kai Gu Song | 2011 | IMP & HIRFL Annual Report2011，，1： | 0 |
| 9 | Calculation of Track Size of HOPG Irradiated with SHI by Inelastic Thermal Spike Model显示文摘 | Zhai Pengfei Liu Jie Duan Jinglai Zeng Jian Hou Mingdong Sun Youmei | 2011 | IMP & HIRFL Annual Report2011，，1： | 0 |
| 10 | Simulations of Single Event Upset (SEU) in SRAMs Induced by Heavy Ions with Geant4显示文摘 | Liu Jiande Sun Youmei Liu Jie Hou Mingdong Duan Jinglai Zhang Zhangang Yao Huijun Mo Dan | 2011 | IMP & HIRFL Annual Report2011，，1： | 0 |
| 11 | 22 AMeV Fe Ions Induced Irradiation Damage in C_(60) Films: a Raman spectra study显示文摘In order to investigate the structural stability of fullerene (C60) under swift heavy ion irradiation, the irradiation experiments of thin C60 films were performed with 22 AMeV 56Fe ions delivered by HIRFL. The flux was not more than 1×108 ions/cm2·s to limit thermal effects during irradiation. The irradiation fluences were 5×1010- 8×1013 ions/cm2. | Jin Yunfan Yao Cunfeng Wang Zhiguang Xie Erqing Song Yin Sun Youmei Zhang Chonghong Liu Jie Duan Jinglai | 2004 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2004，，1： | 0 |
| 12 | Production of sp3 Hybridization by Swift Heavy Ion Irradiation of HOPG at Room Temperature显示文摘 | Zeng Jian Liu Jie Zhai Pengfei Sun Youmei Hou Mingdong Duan Jinglai | 2011 | IMP & HIRFL Annual Report2011，，1： | 0 |
| 13 | Enhanced Defect Accumulation and Erosion in GaN Bombarded with Low-energy Highly Charged Heavy Ions显示文摘Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelectronic devices. Ion beam implantation/engineering is an attractive method for device techniques such as selective-area doping or dry etching. The understanding of the damage production in GaN bombarded with energetic ions is fundamentally useful for the applications. | Zhang Chonghong Sun Youmei Song Yin Chen Hong Zhao Zhiming Yao Cunfeng Wang Zhiguang Liu Cunbao Yang Yitao Ma Hongji Nie Pui | 2004 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2004，，1： | 0 |
| 14 | Damage Accumulation and Its Effect in Gallium Nitride Film by ^(208)pb^(27+) Ions of 1.1 MeV/u显示文摘Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelectronic devices. Ion beam implantation/engineering is an attractive method for device techniques such as selective-area doping or dry etching. The understanding of the damage production in GaN bombarded with energetic ions is fundamentally useful for the solution of such technical issues. Compared with low-energy ion irradiation, effects of swift heavy ions which induce intensive electronic excitation in GaN have been seldom investigated. | Zhang Chonghong Song Yin Sun Youmei Chen Hong Wang Zhiguang Yao Cunfeng Zhao Zhiming Ma Hongji Nie Rui | 2004 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2004，，1： | 0 |
| 15 | Microstructures and Optical Properties of Highly Charged 209Bi33+-irradiated GaN Epi-layers显示文摘 | Zhang Liqing Zhang Chonghong Gou Jie Yang Yitao Song Yin Li Jianjian Sun Youmei | 2011 | IMP & HIRFL Annual Report2011，，1： | 0 |
| 16 | FTIR Study of C-doped SiO_2 Films after High Energy Xe Ion Irradiation显示文摘SiO2 films were firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 1.75 GeV Xe ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to a dose in the range from 5.0×1016 to 8.6×1017 C/cm2. The Xe ion irradiation was carried out at HIRFL (Lanzhou) and the irradiation fluence was 5.0×1011 Xe/cm2. The new chemical bonds formed in the samples were investigated by use of micro-FTIR spectroscopy. Some parameters were given in Table 1. | Zhao Zhiming Wang Zhiguang Jin Yunfan Song Yin Sun Youmei Zhang Chonghong Liu Jie Xie Erqing | 2004 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2004，，1： | 0 |
| 17 | Raman Scattering Spectrum Study of Radiation Damage Created by MeV Inert Gas Ions in GaN Epitaxial Layers显示文摘 | Zhang Liqing Zhang Chonghong Gou Jie Yang Yitao Song Yin Li Jianjian Sun Youmei | 2011 | IMP & HIRFL Annual Report2011，，1： | 0 |
| 18 | Electrical and Optical Epilayer Irradiated with Properties of Al0.25Ga0.75N 290 MeV 238U32+ Ions显示文摘 | Gou Jie Zhang Chonghong Zhang Liqing Yang Yitao Li Jianiianx Li Jianiian Sun Youmei Meng Yanchong | 2011 | IMP & HIRFL Annual Report2011，，1： | 0 |
| 19 | Electrical and Optical Properties of GaN Epilayer Irradiated with 290 MeV 23au32+ Ions显示文摘 | Gou Jie Zhang Chonghong Zhang Liqing Yang Yitao Li Jianjian Sun Youmei Meng Yancheng | 2011 | IMP & HIRFL Annual Report2011，，1： | 0 |
| 20 | Effects of UV Light Illumination on Track Etching in Polycarbonate显示文摘Nuclear track membranes offer distinct advantages over conventional membranes due to their precisely determined structure . The pore size, shape and density can be controlled intentionally so that a membrane with the required characteristics can be produced. The track etching technology plays a most important role in the production of nuclear track membranes. In this work, the pretreatment effects by using UV light illumination on track etching of polycarbonate (PC) track membranes were investigated. | Duan Jinglai, Liu Jie, Wang Zhiguang, Hou Mingdong, Jin Yunfan, Sun Youmei Song Yin, Yao Huijun, Zhao Zhiming and Yao Cunfeng | 2004 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2004，，1： | 0 |
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