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| 1 | DNA barcoding of 18 species of Bovidae显示文摘Genetic divergences of mitochondrial cytochrome c oxidase subunit I genes,known as DNA barcodes,have been used in species identification in the animal kingdom.Barcodes can assist field workers and taxonomists to determine groups in need of taxa analysis,and facilitate the recognition of appropriate populations and scales for conservation planning.In this study,18 species of Bovidae were selected to evaluate the effectiveness of DNA barcoding for species differentiation.The results showed that all but 2 species had unique DNA barcodes.The mean intraspecific variation was 0.63%,yielding a threshold of 6.3% for flagging putative species.The results supported the inference that barcode variation within species of mammals is somewhat higher than within other animal groups.The present study validated the effectiveness of barcoding for the identification of bovid species. | CAI YanSen ZHANG Liang SHEN FuJun ZHANG WenPing HOU Rong YUE BiSong LI Jing ZHANG ZhiHe | 2011 | Chinese Science Bulletin2011，56，2： | 10 |
| 2 | β-Ga_2O_3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy显示文摘Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ 011ˉ0](0001)Al_2O_3 via in-situ reflection high energy electron diffraction(RHEED) monitoring and ex-situ X-ray diffraction(XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum(FWHM) of XRD ω-rocking curve of( 2ˉ01) plane and root mean square(RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C,respectively. Room temperature cathodoluminescence measurement shows an emission at ~417 nm, which is most likely originated from recombination of donor–acceptor pair(DAP). | Jiaqi Wei Kumsong Kim Fang Liu Ping Wang Xiantong Zheng Zhaoying Chen Ding Wang Ali Imran Xin Rong Xuelin Yang Fujun Xu Jing Yang Bo Shen Xinqiang Wang | 2019 | Journal of Semiconductors2019，40，1： | 4 |
| 3 | Microsatellite variability reveals high genetic diversity and low genetic differentiation in a critical giant panda population显示文摘 | Jiandong YANG Zhihe ZHANG Fujun SHEN Xuyu YANG Liang ZHANG Limin CHEN Wenping ZHANG Qing ZHU Rong HOU | 2011 | Current Zoology2011，57，6： | 3 |
| 4 | Numerical experiment rock fragmentation by combined dynamic and static loads under dual-cutter head显示文摘This paper puts forward a new rock fragmentation loading method of dual-cutter head combined dynamic and static loads.By applying the numerical simulation software-RFPA2D,we have done numerical experiment about the siltstone's crushing effect by dynamic load on single cutter head without confining pressure,dynamic load on single cutter head with confining pressure 10MPa and different dual-cutter heads spacing by combined dynamic and static loads with confining pressure 10MPa.Experimental results show that the confining pressure can obviously affect the rock fragmentation effect.Combined dynamic and static loads can greatly improve the rock fragmentation effect.There exists an optimal spacing of dual-cutter head that can make the rock fragmentation achieve the desired effect.Through analyzing the acoustic emission accumulative energy and quantity,the authors make a conclusion that the optimum spacing is 30 mm. | Zhao Fujun Wang Hongyu Shen Peiwen Chen Caixian Xu Yanfei | 2012 | Engineering Sciences2012，10，2： | 3 |
| 5 | Highly sensitive,sub-microsecond polymer photodetectors for blood oxygen saturation testing显示文摘Bottom surface of active layers and interface of indium tin oxide(ITO)electrodes and active layers play a crucial role in determining the performance of polymer photodetectors with photomultiplication(PM-PPDs).The interfacial trapped electron distribution closing to ITO electrodes will determine spectral response range and external quantum efficiency(EQE)of PMPPDs.The bottom interface is more sensitive than top interface when light is coming from the ITO side,and the larger density of generated charge on the bottom interfaces will induce interfacial band more bending for efficient charge tunneling injection.Highly sensitive and sub-microsecond PM-PPDs are achieved with PMBBDT:Y6(100:7,w/w)as active layers under forward bias,yielding EQE of 18,700%at 320 nm,21,700%at 600 nm and 16,400%at 810 nm under a bias of 7 V,respectively,as well as fast response time of 79μs.The high EQE of the PM-PPDs is attributed to efficient hole tunneling injection from ITO electrode under forward bias.The electron traps closing to ITO electrode will be quickly filled up when light is coming from ITO side,leading to interfacial band more bending for hole tunneling injection.Importantly,the PM-PPDs is performed to measure heart rate(HR)and blood oxygen saturation(SpO_(2)),and the measured data by the PM-PPDs are very similar with those obtained by commercial photodetectors. | Zijin Zhao Baiqiao Liu Changlin Xie Yao Ma Jian Wang Ming Liu Kaixuan Yang Yunhua Xu Jian Zhang Weiwei Li Liang Shen Fujun Zhang | 2021 | Science China Chemistry2021，64，8： | 2 |
| 6 | Up-regulating arginase contributes to amelioration of chilling stress and the antioxidant system in cherry tomato fruits显示文摘 | ZHANG Xinhua SHEN Lin LI Fujun | 2010 | J Sci Food Agric2010，90，13： | 1 |
| 7 | Up-regulating arginase contributes to amelioration of chilling stress and the antioxidant system in cherry tomato fruits显示文摘 | ZHANG Xinhua SHEN Lin LI Fujun | 2010 | Journal of the Science of Food and Agficulture2010，，： | 1 |
| 8 | Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping显示文摘Solving the doping asymmetry issue in wide gap semiconductors is a key dificulty and long-standing challenge for device applications.Here,a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport.Specific to the p-doping issue in Al-rich AlGaN,self-assembled p-AlGaN superlattices with an average Al composition of over 50%are prepared by adopting this approach.The hole concentration as high as 8.1×10^(18)cm^(-3)is thus realized at room temperature,which is attributed to the signifcant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path,as well as the highlighted Mg surface-incorporation by an intentional interruption for desorption.More importantly,benefting from the constant ultrathin barrier thickness of only three monolayers via this approach,vertical miniband transport of holes is verifed in the p-AlGaN superlattices,greatly satisfying the demand of hole injection in device application.280 nm deep-ultraviolet light emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices,which exhibit a great improvement of the carrier injection efficiency and light extraction efficiency,thus leading to a 55.7%increase of the light output power.This study provides a solution for p-type doping of Al-rich AlGaN,and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors. | Jiaming Wang Mingxing Wang Fujun Xu Baiyin Liu Jing Lang Na Zhang Xiangning Kang Zhixin Qin Xuelin Yang Xinqiang Wang Weikun Ge Bo Shen | 2022 | Light(Science & Applications)2022，11，4： | 1 |
| 9 | Protective effect of polysaccharides isolated from Tremella fuciformis against radiation-induced damage in mice显示文摘 | Xu Wenqing Shen Xiu Yang Fujun | 2012 | Journal of Radiation Research2012，53，3： | 1 |
| 10 | Arginase induction by heat treatment contributes to amelioration of chilling injury and activation of antioxidant enzymes in tomato fruit显示文摘 | ZHANG Xinhua SHEN Lin LI Fujun | 2013 | Postharvest Biology and Technology2013，79，： | 1 |
| 11 | Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate显示文摘Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm^(−2) at T=8 and 77 K,respectively.To achieve such a low threshold power density,vicinal GaN substrates were used to reduce the edge-component threading dislocation(ETD)density of the InN film.Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps,and the ETD density can be reduced to approximately 5×10^(8) cm^(−2) near the surface of the 5-μm-thick film.The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film.As a result,the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated. | Huapeng Liu Bowen Sheng Tao Wang Konstantin Kudryavtsev Artem Yablonskiy Jiaqi Wei Ali Imran Zhaoying Chen Ping Wang Xiantong Zheng Renchun Tao Xuelin Yang Fujun Xu Weikun Ge Bo Shen Boris Andreev Xinqiang Wang | 2022 | Fundamental Research2022，2，5： | 0 |
| 12 | Progress in efficient doping of Al-rich AlGaN显示文摘The development of semiconductors is always accompanied by the progress in controllable doping techniques.Taking AlGaN-based ultraviolet(UV)emitters as an example,despite a peak wall-plug efficiency of 15.3%at the wavelength of 275 nm,there is still a huge gap in comparison with GaN-based visible light-emitting diodes(LEDs),mainly attributed to the inefficient doping of AlGaN with increase of the Al composition.First,p-doping of Al-rich AlGaN is a long-standing challenge and the low hole concentration seriously restricts the carrier injection efficiency.Although p-GaN cladding layers are widely adopted as a compromise,the high injection barrier of holes as well as the inevitable loss of light extraction cannot be neglected.While in terms of n-doping the main issue is the degradation of the electrical property when the Al composition exceeds 80%,resulting in a low electrical efficiency in sub-250 nm UV-LEDs.This review summarizes the recent advances and outlines the major challenges in the efficient doping of Al-rich AlGaN,meanwhile the corresponding approaches pursued to overcome the doping issues are discussed in detail. | Jiaming Wang Fujun Xu Lisheng Zhang Jing Lang Xuzhou Fang Ziyao Zhang Xueqi Guo Chen Ji Chengzhi Ji Fuyun Tan Xuelin Yang Xiangning Kang Zhixin Qin Ning Tang Xinqiang Wang Weikun Ge Bo Shen | 2024 | Journal of Semiconductors2024，45，2： | 0 |
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