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2篇 您的检索式：作者名="Ruoting Dong"

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		题名	作者	年代	出处	被引量
	1	Wafer-scale synthesis of monolayer WS2 for high-performance flexible photodetectors by enhanced chemical vapor deposition显示文摘	Changyong Lan Ziyao Zhou Zhifei Zhou Chun Li Lei Shu Lifan Shen Dapan Li Ruoting Dong SenPo Yip Johnny C. Ho	2018	Nano Research2018，11，6：	12
	2	Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors显示文摘Amorphous indium-gallium-zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications;however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn2.4O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm^2-V^-1·s^-1 and on/off current ratio of ~ 10^6. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies.	Fangzhou Li SenPo Yip Ruoting Dong Ziyao Zhou Changyong Lan Xiaoguang Liang Dapan Li You Meng Xiaolin Kang Johnny C. Ho	2019	Nano Research2019，12，8：	1

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