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您的检索式：作者名="Johnny C. Ho"
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| 1 | Wafer-scale synthesis of monolayer WS2 for high-performance flexible photodetectors by enhanced chemical vapor deposition显示文摘 | Changyong Lan Ziyao Zhou Zhifei Zhou Chun Li Lei Shu Lifan Shen Dapan Li Ruoting Dong SenPo Yip Johnny C. Ho | 2018 | Nano Research2018，11，6： | 12 |
| 2 | Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors显示文摘Amorphous indium-gallium-zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications;however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn2.4O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm^2-V^-1·s^-1 and on/off current ratio of ~ 10^6. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies. | Fangzhou Li SenPo Yip Ruoting Dong Ziyao Zhou Changyong Lan Xiaoguang Liang Dapan Li You Meng Xiaolin Kang Johnny C. Ho | 2019 | Nano Research2019，12，8： | 1 |
| 3 | High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks显示文摘 | Hongchao Zhang You Meng Longfei Song Linqu Luo Yuanbin Qin Ning Han Zaixing Yang Lei Liu Johnny C. Ho Fengyun Wang | 2018 | Nano Research2018，11，3： | 1 |
| 4 | Towards high-mobility In2xGa2-2xO3 nanowire field-effecttransistors显示文摘Recently, owing to the excellent electrical and optical properties, n-type In203nanowires (NWs) have attracted tremendous attention for application in memorydevices, solar cells, and ultra-violet photodetectors. However, the relatively lowelectron mobility of In203 NWs grown by chemical vapor deposition (CVD) haslimited their further utilization. In this study, utilizing in-situ Ga alloying,highly crystalline, uniform, and thin In2xGa2-2xO3 NWs with diameters down to30 nm were successfully prepared via ambient-pressure CVD. Introducing anoptimal amount of Ga (10 at.%) into the In2O3 lattice was found to effectivelyenhance the crystal quality and reduce the number of oxygen vacancies in theNWs. A further increase in the Ga concentration adversely induced the formationof a resistive β-Ga203 phase, thereby deteriorating the electrical properties ofthe NWs. Importantly, when configured into global back-gated NW field-effecttransistors, the optimized Inl.8Ga0.2O3 NWs exhibit significantly enhanced electronmobility reaching up to 750 cm2.V-l.s^-1 as compared with that of the pure In203NW, which can be attributed to the reduction in the number of oxygen vacanciesand ionized impurity scattering centers. Highly ordered NW parallel arrayeddevices were also fabricated to demonstrate the versatility and potency of theseNWs for next-generation, large-scale, and high-performance nanoelectronics,sensors, etc. | Ziyao Zhou Changyong Lan SenPo Yip Renjie Wei Dapan Li Lei Shu Johnny C. Ho | 2018 | Nano Research2018，11，11： | 1 |
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