| 6 | Trap and 1/f-noise effects at the surface and core of GaN nanowire gateall-around FET structure显示文摘Using capacitance,conductance and noise measurements,we investigate the trapping behavior at the surface and in the core of triangular-shaped one-dimensional (1 D) array of GaN nanowire gate-all-around field effect transistor (GAA FET),fabricated via a top-down process.The surface traps in such a low dimensional device play a crucial role in determining the device performance.The estimated surface trap density rapidly decreases with increasing frequency,ranging from 6.07 × 1012 cm-2·eV-1 at 1 kHz to 1.90 × 1011 cm-2·eV-1 at 1 MHz,respectively.The noise results reveal that the power spectral density increases with gate voltage and clearly exhibits 1/f-noise signature in the accumulation region (Vgs > Vth =3.4 V) for all frquencies.In the surface depletion region (1.5 V < Vgs < Vth),the device is governed by 1/fat lower frequencies and 1/f2 noise at frequencies higher than ~ 5 kHz.The 1/f2 noise characteristics is attributed to additional generation-recombination (G-R),mostly caused by the electron trapping/detrapping process through deep traps located in the surface depletion region of the nanowire.The cutoff frequency for the 1/f2 noise characteristics further shifts to lower frequency of 102-103 Hz when the device operates in deep-subthreshold region (Vgs < 1.5 V).In this regime,the electron trapping/detrapping process through deep traps expands into the totally depleted nanowire core and the G-R noise prevails in the entire nanowire channel. | Mallem Siva Pratap Reddy Ki-Sik Im Jung-Hee Lee Raphael Caulmione Sorin Cristoloveanu | 2019 | Nano Research2019，12，4： | 0 |
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