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12篇 您的检索式:作者名="REBOHLE L"
    题名 作者 年代 出处 被引量
1Transient behavior of the strong violet electroluminescence of Ge-implanted SiO2 layers显示文摘Rebohle L Gebel T Von Botany J Skorupa W Helm M Pacifici D Franzò G Priolo F 0,,:1
2Electroluminescence from thin SiO2 Layers After Si-and C-coimplantation显示文摘Gebel T Rebohle L Sun J 2003Physics E2003,16,:1
3Ion beam processing for Si/C-rich thermally grown SiO2 layer:photoluminescence and microstructure显示文摘Rebohle L Gebel T Frob H 2001Appl Surf Sci2001,184,:1
4Strong photoluminescence of Sn-implanted thermally grown SiO2 layers 显示文摘REBOHLE L BORANY J SKORUPA W 2000Applied Physics Letters2000,77,7:1
5Enhanced blue-violet emission by inverse energy transfer to the Ge-related oxygen deficiency centers via Er^3+ ions in metal-oxide semiconductor structures 显示文摘KANJILAL A REBOHLE L VOELSKOW M 2009Applied Physics Letters2009,94,5:1
6Blue photo and electroluminescence of silicon dioxide layers ion-implanted with group IV elements 显示文摘REBOHLE L BORANY J V FROB H 2000Applied Physics: B2000,71,2:1
7Correlation between the microstructure and electroluminescence properties of Er-doped metal-oxide semiconductor structures显示文摘KANJILAL A REBOHLE L SKORUPA W 2009Appl Phys Lett2009,94,:1
8Electroluminescence from thin SiO2 layer after Si-and C-coimplantation显示文摘GEBEL T REBOHLE L SUN J 2003Physica E2003,,16:1
9Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicondioxide layers显示文摘REBOHLE L von BORANY J YANKOV R A 1997Applied Physics Letters1997,71,19:1
10Blue photo - and electroluminescence of silicon dioxide layers ion -implanted with group IV elements显示文摘Rebohle L Borany J Frob H 2000Appl Phys B2000,71,:1
11Strong blue and violet photolumineseenee and eleetrolumineseenee from germanium-implanted and silicon-implanted silicon-dioxide layers 显示文摘REBOHLE L VON BORANG J YANKOV R A 1997Appl Phys Lett1997,71,:1
12Strong photoluminescence of Sn-implanted thermally grown SiO2 layers显示文摘Rebohle L Von Borany J Skorupa W 2000Appl Phys Lett2000,77,7:1
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