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30篇 您的检索式：作者名="Pensl"

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	题名	作者	年代	出处	被引量
1	Physical properties of silicon carbide 显示文摘	Chovke W J Pensl G	1997	Materials Research Bulletin1997，22，3：	1
2	Silicon car- bide:recent major advances 显示文摘	CHOYKE W J MATSUNAMI H PENSL G	2004	Materials Today2004，7，4：	1
3	Electrical activation of high concentrations of n+ and p+ ions implanted into 4H-SiC显示文摘	LAUBE M SCHMID F PENSL G	2002	J Appl Phys2002，92，7：	1
4	Intrinsic SiC/SiO2 interface states 显示文摘	Afanasev V V Bassler M Pensl G	1997	Physica Status Solidi (a)1997，162，：	1
5	Intrinsic and extrinsic point - defects in vapor transport grown ZnO bulk crystals 显示文摘	Pfisterer D Hofmann D M Sann J Meyer B K Tena-Zaera R Munoz-Sanjose V Frank Th Pensl G	2006	Physica B2006，376，377：	1
6	New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC显示文摘	Yan Fei Devaty Robert P. Choyke Wolfgang J. Kimoto Tsunenobu Ohshima Takeshi Pensl Gerhard Gali Adam	2010	2010 (645)2010，，645：	1
7	Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbide 显示文摘	Weidner M Frank T Pensl G	2001	Physica2001，308，3：	1
8	Oxygen-related defect centers in solar-grade,multicrystalline silicon,a reservoir of lifetime killers显示文摘	Karg D Pensl G Schulz M	2000	Phys Stat Sol (b)2000，222，：	1
9	Anistropy of the Electron Hall Mobility in 4H, 6H, and 15R SiC显示文摘	Schadt M Pensl G	1994	Appl Phys Lett1994，65，24：	1
10	Defect-engineering in SiC by ion implantation and electron irradiation显示文摘	Pensl G Ciobanu F Frank T	2006	Microelectron Eng2006，83，9：	1
11	Growth of SiC Polytypes by the Physical Vapour Transport Technique显示文摘	Semmelroth K Schulze N Pensl G	2004	Journal of Physics Condensed Matter2004，16，17：	1
12	Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbide显示文摘	SUTTROP W PENSL G CHOYKE W J	1992	J Appl Phys1992，72，8：	1
13	Nitrogen donors in 4H-silicon carbide显示文摘	GOTZ W SCHONER A PENSL G	1993	J Appl Phys1993，73，7：	1
14	Anistropy of the electron Hall mobility in4H, 6H, and 15R SiC显示文摘	SCHADT M PENSL G	1994	Appl Phys Lett1994，65，24：	1
15	Nitrogen donors in 4H-silicon carbide显示文摘	GOTZ W SCHONER A PENSL G	1993	JAP1993，73，7：	1
16	Properties of SiC 显示文摘	CHOYKE W J PENSL G	1997	MRS Bull1997，22，3：	1
17	Properties of the oxygen vacancy in ZnO显示文摘	Hofmann D.M Pfisterer D Sann J Meyer B.K TenaZaera R Munoz-Sanjose V Frank T and Pensl G		0，，01：	1
18	Donor states in tellurium-doped silicon显示文摘	SCHAUB R PENSL G SCHULZ M	1984	Applied Physics B1984，34，4：	1
19	Phsical properties of silicon carbide 显示文摘	CHOVKE W J PENSL G	1997	Materials Research Bulletin1997，22，3：	1
20	Nitrogen donors in 4H-silicon carbide显示文摘	Gotz W Schoner A Pensl G	1993	Journal of Applied Physics1993，73，7：	1

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