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5篇 您的检索式：作者名="Nacereddine"

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		题名	作者	年代	出处	被引量
	1	Weld defects in industrial radiography based invariant attributes and neural networks显示文摘	Nacereddine N Tridi M	2005	Image and Signal Processing and Analysis2005，，7：	1
	2	Weld defects in industrial radiography based invariant attributes and neural networks显示文摘	Nacereddine N Tridi M	2005	Image and Signal Processing and Analysis2005，，7：	1
	3	查看详情显示文摘	Fouzia Z Nacereddine H Celine V Michel S.and Jacques D		0，，：	1
	4	Weld defects in industrial radiography based invariant attributes and neural networks 显示文摘	Nacereddine N Tridi M	2005	Image and Signal Processing and Analysis2005，，7：	1
	5	Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications显示文摘We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave frequency applications. In this context, a physics-based model for I–V characteristics and various microwave characteristics such as transconductance, cut-off frequency and maximum frequency of oscillation of submicron triple material gate(TM) GaAs MESFET are developed. The reduced short channel effects have also been discussed in combined designs i.e. TM, DM and SM in order to show the impact of our approach on the GaAs MESFETs-based device design. The proposed analytical models have been verified by their good agreement with 2D numerical simulations. The models developed in this paper will be useful for submicron and microwave analysis for circuit design.	Nacereddine Lakhdar Brahim Lakehal	2016	Journal of Semiconductors2016，37，4：	0

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