维普期刊资源整合服务平台（V6.5）

23篇 您的检索式：作者名="Musca A M"

选中清除导出查看参考文献查看引证文献引用追踪共2页首页上一页第1页下一页末页 /2 跳转

	题名	作者	年代	出处	被引量
1	Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry-P6rot optical filters 显示文摘	HUANG H WINCHESTER K LIU Y HU X Z MUSCA C A DELL J M FARAONE L	2005	Journal of Micromechanics and Microengineerging2005，15，3：	1
2	Characterization of electrically active defects in photovoltaic detector arrays using laser beam-induced current显示文摘	Redfem D A Musca C A Dell J M	2005	IEEE Transactions on Electron Devices2005，52，10：	1
3	High- resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates 显示文摘	R H Sewell C A Musca J M Dell	2005	Journal of Electronic Materials2005，34，6：	1
4	Analysis ofCrosstalk in HgCdTe p-on-n Heterojunction Photo-voltaic Infrared Sensing Arrays 显示文摘	Musca C A Dell J M Faraone L	1999	Journal of Elec-tronic Materials1999，28，6：	1
5	Nanoindentation of HgCdTe prepared by molecular beam epitaxy 显示文摘	M Martyniuk R H Sewell C A Musca	2005	Applied Physics Letters2005，87，25：	1
6	Local bonding environment of plasma deposited nitrogenrich silicon nitride thin films显示文摘	SOH M T K SAVVDES N MUSCA C A	2005	J Appl Phys2005，97，9：	1
7	Digestive enzymes of the salivary glands and gut of Mastotermes darwiniensis 显示文摘	Veivers P C Musca A M O' Brien R W	1982	Insect Biochemistry1982，12，1：	1
8	Char- acterisation of Reactive-ion-etching-induced Type- conversion in p-type HgCdTe Using Scanning Laser Microscopy 显示文摘	Siliquini J F Dell J M Musca C A	1998	Journal of Crystal Growth1998，184，2：	1
9	Analysis of crosstalk in HgCdTe p on-n heterojunction photovoltaic infrared sensing arrays显示文摘	Musca C A Dell J M Faraone L	1999	Journal of Electronic Materials1999，28，6：	1
10	Small two- dimensional arrays of mid-wavelength infrared HgCdTe diodes fabricated by reactive ion etching-induced p-to-ntype conversion 显示文摘	J Antoszewski C A Musca J M Dell	2003	Journal of Electronic Materials2003，32，7：	1
11	HgCdTe Pho- tovoltaic Detectors Fabricated Using a New Junction Formation Technology 显示文摘	Rais M H Musca C A Dell J M	2000	NIicroelectronics Journal2000，31，2：	1
12	Characterization of HgCdTe n on p-type structures obained by reactive ion etching induced p-to-n conversion 显示文摘	Antoszewski J Musca C A Dell J M	2000	Journal of Electronic Materials2000，29，6：	1
13	Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays显示文摘	Musca C A Dell J M Faraone L	1999	Journal of Electronic Materials1999，，：	1
14	Characterisa-tion of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasmainduced type conversion显示文摘	Rais M H Musca C A Antoszewski J		0，，：	1
15	Characterisation of dark current in novel Hgl-xCdxTc mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasmainduced type conversion显示文摘	Rais M H Musca C A Antoszewski J ct al	2000	Journal of Crystal Growth2000，，：	1
16	Dark currents in long wavelength infrared HgCdTe gated photodiodes显示文摘	Nguyen T Musca C A Dell J M	2004	Journal of Electronic Materials2004，33，6：	1
17	Piotrowski Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy显示文摘	J M Dell Musca C A	1998	Appl Phys Lett1998，72，1：	1
18	Dark Currents in Long Wavelength Infrared HgCdTe Gated Photodiodes 显示文摘	Nguyen T Musca C A Dell J M	2004	Journal of ELECTRONIC MATERIALS -2004，33，6：	1
19	Characteri- sation of dark current in novel Hg1- xCdxTe mid- wavelength infrared photovoltaic detectors based on n- on- p junctions formed by plasma- induced type conversion 显示文摘	Musca C A Antoszewski J	2000	J Crys Growth2000，，：	1
20	Laser beam induced current as a tool for HgCdTe photodiode characterization显示文摘	Musca C A Redfern D A Dell J M	2000	Microelectronics Journal2000，31，：	1

返回顶部每页显示：

共2页首页上一页第1页下一页末页 /2 跳转

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

用户提示